X-On Electronics has gained recognition as a prominent supplier of MMBT3906 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3906 Bipolar Transistors - BJT are a product manufactured by Rectron. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3906 Rectron

MMBT3906 electronic component of Rectron
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See Product Specifications
Part No.MMBT3906
Manufacturer: Rectron
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT23 PNP 0.2A 40V G enPur
Datasheet: MMBT3906 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0271 ea
Line Total: USD 162.6 
Availability - 5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 6000  Multiples: 18000
Pack Size: 18000
Availability Price Quantity
5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6000
Multiples : 18000
6000 : USD 0.0271
18000 : USD 0.0246
36000 : USD 0.0243
54000 : USD 0.0239
108000 : USD 0.0234
162000 : USD 0.0227
252000 : USD 0.016
504000 : USD 0.0159

2423
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2498
Multiples : 1
2498 : USD 0.0281

2353
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.165
10 : USD 0.1089
100 : USD 0.0682
1000 : USD 0.0407
3000 : USD 0.0231
9000 : USD 0.022

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
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We are delighted to provide the MMBT3906 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3906 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3906 Silicon PNP SMD triode Ouline example 1 base 2 emitter 3 collector encapsulation mode SOT-23 Classification of hFE 1 Rank L H Range 100-200 200-300 Marking 2A Maximum ratings(Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Breakdown Voltage VCBO -40 V Collector-Emitter Breakdown Voltage VCEO -40 V Emitter-Base Breakdown Voltage VEBO -6 V Collector Current IC -200 mA Collector Power Dissipation PC 225 mW Junction Temperature TJ 150 Storage Temperature Tstg Electrical Characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Max Unit Collector-Base Breakdown Voltage VCBO IC=-100uA IE=0 -40 V Collector-Emitter Breakdown Voltage VCEO IC=-1mA IB=0 -40 V Emitter-Base Breakdown Voltage VEBO IE=-100uA IC=0 -6 V Collector Cutoff Current ICBO VCB=-40V IE=0 -100 nA Collector Cutoff Current ICEX VCB=-30V VEB(off) =-3V -50 nA Emitter Cutoff Current IEBO VCE=-5V IB=0 -100 nA HFE(1) VCE=-1V IC=-10mA 100 300 DC Current Gain HFE(2) VCE=-1V IC=-50mA 60 300 HFE(3) VCE=-1V IC=-100mA 30 IC=-10mA IB=-1mA -0.2 V Collector-Emitter Saturation Voltage VCE(sat) IC=-50mA IB=-5mA -0.2 V IC=-10mA IB=-1mA -0.85 V Collector-Base Saturation Voltage VBE(sat) IC=-50mA IB=-5mA -0.95 V VCE=-20V IC=-10mA transition frequency fT 250 MHz f=100MHz 2017-05/17 REV:ODISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only.Typica paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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