BC856 THRU BC858 FEATURES SOT-23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856 -80 V V CBO BC857 -50 BC858 -30 Collector-Emitter Voltage BC856 -65 V V CEO BC857 -45 BC858 -30 V Emitter-Base Voltage -5 V EBO I Collector Current Continuous -0.1 A C P Collector Power Dissipation 200 mW C R 625Thermal Resistance From Junction To Ambient /W JA T Junction Temperature 150 J T Storage Temperature -65 +150 stg 2020-11/02 REV:B ELECTRICAL CHARACTERISTICS (TD =25 unless otherwise specified) Parameter Symbol Test conditions Max Unit Min Collector-base breakdown voltage BC856 -80 BC857 V -50 V CBO I = -10A, I =0 C E BC858 -30 Collector-emitter breakdown voltage BC856 -65 BC857 V I = -10mA, I =0 -45 V CEO C B BC858 -30 Emitter-base breakdown voltage V -5 V EBO I = -1A, I =0 E C Collector cut-off current BC856 V = -70 V , I =0 CB E BC857 I V = -45 V , I =0 -0.1 A CBO CB E BC858 V = -25 V , I =0 CB E Collector cut-off current BC856 V = -60 V , I =0 CE B BC857 I V = -40 V , I =0 -0.1 A CEO CE B BC858 V = -25 V , I =0 CE B Emitter cut-off current I V = -5 V , I =0 -0.1 EBO EB C A DC current gain BC856A, 857A,858A 125 250 BC856B, 857B,858B h V = -5V,I = -2mA 220 475 FE CE C BC857C,BC858C 420 800 Collector-emitter saturation voltage V (sat) I =-100mA,I = -5 mA -0.5 V CE C B Base-emitter saturation voltage V (sat) I = -100mA, I = -5mA -1.1 V BE C B V = -5 V, I = -10mA CE C Transition frequency 100 MHz f T f=100MHz Collector capacitance C V =-10V, f=1MHz 4.5 pF ob CB RATING AND CHARACTERISTICS CURVES ( BC856 THRU BC858 ) C / C V / V P T ob ib CB EB C a 250 30 f=1MHz I =0/I =0 E C T =25 a 200 C ib 10 150 C ob 100 50 1 0 -0.1 -1 -10 -20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) R a CAPACITANCE C (pF) COLLECTOR POWER DISSIPATION P (mW) C