BAS116 RFG Taiwan Semiconductor

BAS116 Taiwan Semiconductor 200mA, 75V Switching SMD Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 200 mA F High surge current capability V 75 V RRM Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant V at I =150mA 1.25 V F F Halogen-free according to IEC 61249-2-21 T Max. 150 C J Package SOT-23 Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAS116 UNIT Marking code on the device JV Power dissipation P 225 mW D Repetitive peak reverse voltage V 75 V RRM Mean forward current I 200 mA O Non-Repetitive peak forward surge current t=1s I 500 mA FSM Thermal resistance (Junction to Ambient)(Note1) R 330 C/W JA Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG Note1: Valid provided that electrodes are kept at ambient temperature 1 Version: F2001 BAS116 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1.0mA, T = 25C - 0.9 F J - 1.0 I = 10mA, T = 25C F J Forward voltage V V F I = 50mA, T = 25C - 1.1 F J I = 150mA, T = 25C - 1.25 F J I =100A, T = 25C 75 - Reverse voltage V V R J R V =75V T = 25C - 5 R J Reverse current I nA R V =75V T = 150C - 80 R J 2.0 f=1 MHz, V =0V - Junction capacitance R C pF J I =10mA, I =10mA, F R 3.0 - Reverse recovery time t s rr R =100, I =1mA L rr ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BAS116 RF SOT-23 3K / 7 Reel BAS116 RFG SOT-23 3K / 7 Reel Note: G means green compound (halogen free) 2 Version: F2001