BAS316 RRG Taiwan Semiconductor

BAS316 Taiwan Semiconductor 250mA, 100V SMD Switching Diode FEATURES KEY PARAMETERS Fast switching device (trr<4ns) PARAMETER VALUE UNIT Ideal for automated placement I 250 mA F Moisture sensitivity level: level 1, per J-STD-020 V 100 V R Compliance to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC V at I =150mA 1.25 V F F Halogen-free according to IEC 61249-2-21 T Max. 150 C J Package SOD-323 APPLICATIONS Switching mode power supply (SMPS) Configuration Single die Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOD-323 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 4.85 0.5mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAS316 UNIT Marking code on the device A6 Power dissipation P 200 mW D Forward current I 250 mA F Pulse Width = 1 s 4.0 Non-repetitive peak forward surge I A FRM current Pulse Width = 1 ms 1.0 Junction temperature range T -65 to +150 C J Storage temperature range T -65 to +150 C STG 1 Version: E1907 BAS316 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1.0mA, T = 25C - 0.715 F J - 0.855 I = 10mA, T = 25C F J (1) Forward voltage per diode V V F I = 50mA, T = 25C - 1.000 F J I = 150mA, T = 25C - 1.250 F J I = 100A, T = 25C 100 - Reverse voltage V V R J R V = 25V T = 25C - 0.03 R J (2) Reverse current rated V I A R R V = 75V T = 25C - 1.00 R J 1.5 f = 1 MHz, V = 0V - Junction capacitance R C pF J I = 10mA, I = 10mA, F R 4.0 - Reverse recovery time t ns rr R = 100 L Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BAS316 RRG SOD-323 3K / 7 Reel 2 Version: E1907