X-On Electronics has gained recognition as a prominent supplier of BAS21S RFG Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS21S RFG Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS21S RFG Taiwan Semiconductor

BAS21S RFG electronic component of Taiwan Semiconductor
BAS21S RFG Taiwan Semiconductor
BAS21S RFG Diodes - General Purpose, Power, Switching
BAS21S RFG  Semiconductors

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See Product Specifications
Part No. BAS21S RFG
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SOT-23 250V 0.2A Swi tching Diode & Arra
Datasheet: BAS21S RFG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1936 ea
Line Total: USD 0.19 
Availability - 6751
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6751
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.1936
10 : USD 0.1312
100 : USD 0.0839
500 : USD 0.0645
1000 : USD 0.0577
3000 : USD 0.0389
9000 : USD 0.0336
24000 : USD 0.0336

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAS21S RFG from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS21S RFG and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS21 / A / C / S Taiwan Semiconductor 200mA, 250V SMD Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 200 mA F High surge current capability V 250 V RRM Moisture sensitivity level: level 1, per J-STD-020 I 1 A RoHS Compliant FSM Halogen-free according to IEC 61249-2-21 V at I =200mA 1.25 V F F T 150 C J MAX Package SOT-23 APPLICATIONS Switching mode power supply (SMPS) MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 0.5 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAS21 BAS21A BAS21C BSA21S UNIT Marking code on the device JS JS2 JS3 JS4 Power dissipation P 225 mW D Repetitive peak reverse voltage V 250 V RRM Repetitive peak forward current I 625 mA FRM Forward current I 200 mA F Non-Repetitive peak forward surge current I 1 A FSM t = 8.3ms Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG 1 Version: E2001 BAS21 / A / C / S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 500 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT 1.00 I = 100mA, T = 25C F J (1) - Forward voltage per diode V V F 1.25 I = 200mA, T = 25C F J 250 - Reverse voltage I = 100 A, T = 25C V V R J R Reverse current rated V R - 0.1 V = 200 V, T = 25C I A R J R (2) per diode f=1 MHz, V =1V - 5 Junction capacitance C pF R J I =I = 30mA , R = 100, F R L - 50 Reverse recovery time t ns rr I = 1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BAS2xx RF SOT-23 3K / 7 Reel BAS2xx RFG SOT-23 3K / 7 Reel BAS2xx R5 SOT-23 10K / 13 Reel BAS2xx R5G SOT-23 10K / 13 Reel BAS2xx-B0 RF SOT-23 3K / 7 Reel BAS2xx-B0 RFG SOT-23 3K / 7 Reel BAS2xx-B0 R5 SOT-23 10K / 13 Reel BAS2xx-B0 R5G SOT-23 10K / 13 Reel BAS2xx-D0 RF SOT-23 3K / 7 Reel BAS2xx-D0 RFG SOT-23 3K / 7 Reel BAS2xx-D0 R5 SOT-23 10K / 13 Reel BAS2xx-D0 R5G SOT-23 10K / 13 Reel Notes: 1.x is device code from1 to1 2. G means green compound (halogen free) 2 Version: E2001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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