Product Information

BAV99W,LF

Name: BAV99W,LF
Brand: Toshiba
SKU: BAV99WLF_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

BAV99W,LF electronic component of Toshiba

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Datasheet

Diodes - General Purpose, Power, Switching Switching Diode 100V .9pF .15A

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5877 ea
Line Total: USD 0.59

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Tue. 04 Jun MOQ : 1 Multiples : 1 BAV99W,LF Toshiba	1 : USD 0.5877 10 : USD 0.5396 100 : USD 0.1225 500 : USD 0.0727 1000 : USD 0.0502 3000 : USD 0.0417

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Additional Infomation About Product

BAV99W Switching Diodes Silicon Epitaxial Planar BAV99WBAV99WBAV99WBAV99W 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Anode 1 2: Cathode 2 3: Cathode 1/Anode 2 USM 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 100 V RM Reverse voltage V 100 R Peak forward current I (Note 1) 500 mA FM Average rectified current I (Note 2) 150 O Non-repetitive peak forward surge current I (Note 2), (Note 3) 2 A FSM Power dissipation P 100 mW D Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating 40% Note 2: Unit rating. Total rating = Unit rating 70% Note 3: Measured with a 10 ms pulse. Start of commercial production 2016-08 2016-2017 2017-12-21 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0BAV99W 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 1 mA 0.715 V F F V (2) I = 10 mA 0.855 F F V (3) I = 50 mA 1.00 F F V (4) I = 150 mA 1.25 F F Reverse current I (1) V = 25 V 30 nA R R I (2) V = 80 V 200 R R Total capacitance C V = 0 V, f = 1 MHz 0.9 pF t R Reverse recovery time t I = 10 mA, See Fig. 4.1. 4.0 ns rr F Fig. Fig. Fig. Fig. 4.14.14.14.1 Reverse recovery time (tReverse recovery time (tReverse recovery time (tReverse recovery time (trrrrrrrr) Test circuit) Test circuit) Test circuit) Test circuit 5. 5. MarkingMarking 5. 5. MarkingMarking 2016-2017 2017-12-21 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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