GSD2004S-G www.vishay.com Vishay Semiconductors Dual In-Series Small Signal High Voltage Switching Diode FEATURES Silicon epitaxial planar diode 3 Fast switching dual in-series diode, especially suited for applications requiring high voltage capability AEC-Q101 qualified available (part number on request) 1 2 Base P/N-G3 - green, commercial grade Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS GSD2004S-G GSD2004S-G3-08 or GSD2004S-G3-18 Dual serial DB7 Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V 240 V R Peak repetitive reverse voltage V 300 V RRM Forward current (continuous) I 225 mA F Peak repetitive forward current I 625 mA FRM t = 1 s I 4.0 A p FSM Non-repetitive peak forward current t = 1 s I 1.0 A p FSM (1) Power dissipation P 350 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Typical thermal resistance junction to R 357 C/W thJA (1) ambient air Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate Rev. 1.2, 13-Feb-18 Document Number: 85423 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 GSD2004S-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A V 300 V R BR V = 240 V I 100 nA R R Leakage current V = 240 V, T = 150 C I 100 A R j R I = 20 mA V 0.83 0.87 V F F Forward voltage I = 100 mA V 1.00 V F F Diode capacitance V = V = 0, f = 1 MHz C 5.0 pF F R D I = I = 30 mA, i = 3.0 mA, F R R Reverse recovery time t 50 ns rr R = 100 L Note (1) Device on fiberglass substrate LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 1.2, 13-Feb-18 Document Number: 85423 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000