BAS16WS-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified available (part number on request) Base P/N-G3 - green, commercial grade Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS16WS-G BAS16WS-G3-08 or BAS16WS-G3-18 Single AK Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 V R Repetitive peak reverse voltage V 100 V RRM Forward current (continuous) I 250 mA F t = 1 s I 2A FSM Non-repetitive peak forward current t = 1 ms I 1A FSM t = 1 s I 0.5 A FSM Power dissipation P 200 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air R 650 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 1.4, 12-Jul-17 Document Number: 85152 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS16WS-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 150 mA V 1.250 V F F I = 1 mA V 0.715 V F F Forward voltage I = 10 mA V 0.855 V F F I = 50 mA V 1V F F V = 75 V I 1000 nA R R Leakage current V = 25 V, T = 150 C I 30 A R J R V = 75 V, T = 150 C I 50 A R J R Diode capacitance V = 0, f = 1 MHz C 2pF R D I = 10 mA, I = 10 mA, F R Reverse recovery time t 6ns rr i = 1 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 3 500 10 400 2 T = 100 C 10 j T = 25 C j 300 10 200 1 100 - 1 10 - 2 0 10 0 100 200 0 12 18185 T (C) 18105 V (V) amb F Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 4 10 T = 25 C j T = 25 C j 5 1.1 f = 1 MHz f = 1 kHz 2 3 10 1.0 5 2 0.9 2 10 5 0.8 2 10 5 0.7 2 082416 0 -2 -1 2 10 1011100 17440 V (V) R 17438 I (mA) F Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.4, 12-Jul-17 Document Number: 85152 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R () I (mA) f F C (V ) D R P (mW) tot C (0 V) D