RFN3BGE6STL ROHM

Super Fast Recovery Diode RFN3BGE6S Datasheet Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 General rectification 2.3 2.3 TO-252 Features Cathode 1) Low switching loss Structure ROHM : TO-252GE 2) Low forward voltage JEITA : - Manufacture Date Open Anode Construction Taping Dimensions (Unit : mm) Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R I 60Hz half sin wave , Resistive load T =112C Average rectified foward current c 3 A o 60Hz half sin wave ,Non-repetitive at T=25C Forward current surge peak I 20 j A FSM T - 150 Operating junction temperature C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =3A Forward voltage V - 1.35 1.55 V F F I V =600V Reverse current -0.05 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 18 30 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.D 1/4 3.0 2.0 6.0Datasheet RFN3BGE6S Electrical characteristic curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j 1 T = 150 C j 100 T = 125 C j T = 25 C j 0.1 T = 75 C j 10 T = 25 C j 0.01 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.D 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM