RFN3BM2STL ROHM

Super Fast Recovery Diode RFN3BM2S Datasheet Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 General rectification 1 2.3 2.3 TO-252 Cathode Features Structure ROHM : TO-252 1) Low switching loss JEITA : SC-63 2) High current overload capacity 1 : Manufacture Date Open Anode Taping Dimensions (Unit : mm) Construction Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 200 V R Average rectified foward current I 60Hz half sin wave , Resistive load 3 A o 60Hz half sin wave ,Non-repetitive at T=25C Forward current surge peak I 40 j A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =3A Forward voltage V - 0.9 0.98 V F F I V =200V Reverse current -0.05 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 12 25 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.C 1/4 3.0 2.0 6.0Datasheet RFN3BM2S Electrical Characteristic Curves 100 10000 T = 125 C j T = 150 C j 1000 10 T = 75 C j 100 1 T = 150 C j 10 T = 25 C j T = 125 C j 0.1 T = 75 C j 1 T = 25 C j 0.1 0.01 0 200 400 600 800 1000 1200 1400 1600 0 50 100 150 200 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM