X-On Electronics has gained recognition as a prominent supplier of RFN3BM6STL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN3BM6STL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN3BM6STL ROHM

RFN3BM6STL electronic component of ROHM
RFN3BM6STL ROHM
RFN3BM6STL Diodes - General Purpose, Power, Switching
RFN3BM6STL  Semiconductors

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See Product Specifications
Part No. RFN3BM6STL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V Vrm 3A Io Std Fast Rec Diode
Datasheet: RFN3BM6STL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1676 ea
Line Total: USD 1.17 
Availability - 2419
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2419
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 1.1676
10 : USD 1.0508
100 : USD 0.8387
500 : USD 0.7126
1000 : USD 0.5797
2500 : USD 0.5328
5000 : USD 0.5328
25000 : USD 0.5112

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN3BM6STL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN3BM6STL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFN3BM6S Data Sheet lSeries lDimensions (Unit : mm) lLand Size Figure (Unit : mm) 6.0 Standard Fast Recovery lApplication 1.6 1.6 General rectification 1 TO-252 2.3 2.3 lFeatures Cathode 1) Low switching loss lStructure ROHM : TO-252 2) Low forward voltage JEITA : SC-63 1 : Manufacture Date Open Anode lConstruction lTaping Dimensions (Unit : mm) 2.00.05 1.550.1 4.00.1 8.00.1 f1.550.1 0.40.1 Silicon epitaxial planar type 0 TL f3.30.000.1 .1 6.80.1 8.00.1 2.70.2 lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R I 60Hz half sin wave , Resistive load T =112C Average rectified foward current c 3 A o 60Hz half sin wave ,Non-repetitive at T =25C Forward current surge peak I 20 j A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =3A Forward voltage V - 1.35 1.55 V F F I V =600V Reverse current - 0.05 10 mA R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 18 30 ns F R R Thermal resistance R Junction to case - - 6.0 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 1/4 10.10.1 00.5 13.50.2 7.50.05 2.50.1 16.00.2 10.10.1 3.0 2.0 6.0 Data Sheet RFN3BM6S lElectrical characteristic curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j 1 T = 150 C j 100 T = 125 C j T = 25 C j 0.1 T = 75 C j 10 T = 25 C j 0.01 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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