Product Information

RFN5BM3SFHTL

RFN5BM3SFHTL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching Fast Recvry 350V Vr TO-252(DPAK) 5A Io
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.836 ea
Line Total: USD 1.84

4232 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4027 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.5306
10 : USD 1.234
100 : USD 1.0512
500 : USD 0.935
1000 : USD 0.8056
2500 : USD 0.7985
5000 : USD 0.7926
10000 : USD 0.7665
25000 : USD 0.7475

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Qualification
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFN5BM3SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 1 General rectification 2.3 2.3 TO-252 Features Cathode 1) Low switching loss Structure ROHM : TO-252 High current overload capacity 2) JEITA : SC-63 1 : Manufacture Date Open Anode Construction Taping Dimensions (Unit : mm) 2.00.05 1.550.1 4.00.1 8.00.1 1.550.1 0.40.1 Silicon epitaxial planar type 0 TL 3.00.1 3.00.1 6.80.1 8.00.1 2.70.2 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 350 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 350 V R I 60Hz half sin wave , Resistive load T =95C Average rectified foward current c 5 A o 60Hz half sin wave ,Non-repetitive at T=25C Forward current surge peak I 50 j A FSM T - 150 Operating junction temperature C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =5A Forward voltage V -1.1 1.5 V F F I V =350V Reverse current -0.05 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 20 30 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 1/4 10.10.1 00.5 13.50.2 7.50.05 2.50.1 16.00.2 10.10.1 3.0 2.0 6.0Data Sheet RFN5BM3SFH Electrical characteristic curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j 1 T = 150 C 100 j T = 25 C j T = 125 C 10 j 0.1 T = 75 C j 1 T = 25 C j 0.01 0.1 0 50 100 150 200 250 300 350 0 500 1000 1500 2000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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