X-On Electronics has gained recognition as a prominent supplier of RFNL20TJ6SGC9 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFNL20TJ6SGC9 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFNL20TJ6SGC9 ROHM

RFNL20TJ6SGC9 electronic component of ROHM
RFNL20TJ6SGC9 ROHM
RFNL20TJ6SGC9 Diodes - General Purpose, Power, Switching
RFNL20TJ6SGC9  Semiconductors

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See Product Specifications
Part No. RFNL20TJ6SGC9
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V Vrm 20A Io Recovery Diode
Datasheet: RFNL20TJ6SGC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.5011 ea
Line Total: USD 2.5 
Availability - 511
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
511
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 2.5011
10 : USD 1.4172
100 : USD 1.1944
500 : USD 1.1085
1000 : USD 1.1045
2000 : USD 1.0884
5000 : USD 1.0615
10000 : USD 1.0602

109
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 70
Multiples : 1
70 : USD 1.9547
100 : USD 1.8673

155
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 57
Multiples : 1
57 : USD 1.3838
57 : USD 1.3798
100 : USD 1.3777

582
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 70
Multiples : 1
70 : USD 1.9547
100 : USD 1.8673
250 : USD 1.7924
500 : USD 1.6612

   
Manufacturer
Product Category
Product
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Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
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Type
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We are delighted to provide the RFNL20TJ6SGC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFNL20TJ6SGC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFNL20TJ6S Data Sheet lSerise lDimensions (Unit : mm) lStructure 4.50.1 f3.10.1 Standard Fast Recovery 10.20.2 2.60.1 lApplication General rectification For PFC Anode Cathode RFNL20 (DCM : Discontinuous Current Mode) TJ6S 1 2 lFeatures 2.60.1 1) Ultra low forward voltage 1.40.2 2) Low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.830.1 lConstruction 5.080.1 Silicon epitaxial planar type ROHM : TO-220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Direct reverse voltage 600 Reverse voltage V R I 60Hz half sin wave , resistive load T =70C Average current c 20 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 200 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C 0.9 1.1 1.3 V j V I =20A Forward voltage F F T =125C - 0.95 - V j T =25C j - 0.05 10 mA I V =600V Reverse current R R T =125C j - 8 200 mA I =0.5A, I =1A, Irr=0.25I - 54 70 ns F R R Reverse recovery time trr I =20A, V =400V, dI /dt=-100A/ ms - 115 180 ns F R F I =20A, dI /dt=100A/ ms, Forward recovery time tfr - 360 - ns F F V V =1.1xV Forward recovery voltage - 2.5 - V Fp FR Fmax R (j-a) Junction to ambient - - 7.0 C/W th Thermal resistance R (j-c) Junction to case - - 2.5 C/W th www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.01 - Rev.A 1/5 3 16.00.1 9.560.2 3.950.1 13.51 28.560.2 9.050.1 6 15.050.1 Data Sheet RFNL20TJ6S lElectrical Characteristic Curves 100 100000 T = 125 C j T = 150 C j 10000 10 T = 75 C 1000 j T = 150 C j 1 100 T = 125 C T = 25 C j j 0.1 T = 75 C j 10 T = 25 C j 1 0.01 0 500 1000 1500 2000 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.01 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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