X-On Electronics has gained recognition as a prominent supplier of RFNL20TJ6SGC9 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFNL20TJ6SGC9 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFNL20TJ6SGC9 ROHM

RFNL20TJ6SGC9 electronic component of ROHM
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See Product Specifications
Part No.RFNL20TJ6SGC9
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V Vrm 20A Io Recovery Diode
Datasheet: RFNL20TJ6SGC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3455 ea
Line Total: USD 1.35

Availability - 522
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
522
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 1.3455
10 : USD 1.1132
100 : USD 0.9465
500 : USD 0.9108
2000 : USD 0.9097
25000 : USD 0.9085

109
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 78
Multiples : 1
78 : USD 1.4422
100 : USD 1.3777

194
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 9
Multiples : 1
9 : USD 4.5987
19 : USD 2.2425
50 : USD 2.0475
100 : USD 1.6575
200 : USD 1.5584

582
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 78
Multiples : 1
78 : USD 1.4422
100 : USD 1.3777
250 : USD 1.3225
500 : USD 1.2748

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
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Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
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We are delighted to provide the RFNL20TJ6SGC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFNL20TJ6SGC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFNL20TJ6S Data Sheet lSerise lDimensions (Unit : mm) lStructure 4.50.1 f3.10.1 Standard Fast Recovery 10.20.2 2.60.1 lApplication General rectification For PFC Anode Cathode RFNL20 (DCM : Discontinuous Current Mode) TJ6S 1 2 lFeatures 2.60.1 1) Ultra low forward voltage 1.40.2 2) Low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.830.1 lConstruction 5.080.1 Silicon epitaxial planar type ROHM : TO-220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Direct reverse voltage 600 Reverse voltage V R I 60Hz half sin wave , resistive load T =70C Average current c 20 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 200 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C 0.9 1.1 1.3 V j V I =20A Forward voltage F F T =125C - 0.95 - V j T =25C j - 0.05 10 mA I V =600V Reverse current R R T =125C j - 8 200 mA I =0.5A, I =1A, Irr=0.25I - 54 70 ns F R R Reverse recovery time trr I =20A, V =400V, dI /dt=-100A/ ms - 115 180 ns F R F I =20A, dI /dt=100A/ ms, Forward recovery time tfr - 360 - ns F F V V =1.1xV Forward recovery voltage - 2.5 - V Fp FR Fmax R (j-a) Junction to ambient - - 7.0 C/W th Thermal resistance R (j-c) Junction to case - - 2.5 C/W th www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.01 - Rev.A 1/5 3 16.00.1 9.560.2 3.950.1 13.51 28.560.2 9.050.1 6 15.050.1 Data Sheet RFNL20TJ6S lElectrical Characteristic Curves 100 100000 T = 125 C j T = 150 C j 10000 10 T = 75 C 1000 j T = 150 C j 1 100 T = 125 C T = 25 C j j 0.1 T = 75 C j 10 T = 25 C j 1 0.01 0 500 1000 1500 2000 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.01 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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