X-On Electronics has gained recognition as a prominent supplier of RFV8TG6SGC9 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFV8TG6SGC9 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFV8TG6SGC9 ROHM

RFV8TG6SGC9 electronic component of ROHM
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See Product Specifications
Part No.RFV8TG6SGC9
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V Vrm 8A Io Recovery Diode
Datasheet: RFV8TG6SGC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.659 ea
Line Total: USD 1.66 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.026

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.659
10 : USD 1.3734
100 : USD 1.0974
500 : USD 0.956
1000 : USD 0.7996
2000 : USD 0.7711
5000 : USD 0.7642
10000 : USD 0.7642
25000 : USD 0.7642

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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We are delighted to provide the RFV8TG6SGC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFV8TG6SGC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFV8TG6S Data Sheet lSerise lDimensions (Unit : mm) lStructure f3.80.06 4.50.1 Standard Fast Recovery 10.20.2 1.280.06 lApplication General rectification For PFC Anode RFV8 Cathode (CCM : Continuous Current Mode) TG6S 1 2 lFeatures 2.60.1 Hyper fast recovery / Hard recovery type 1) 1.40.2 2) Ultra low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.06 0.83 lConstruction 0.10 5.080.1 Silicon epitaxial planar type ROHM : TO-220AC 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 600 V RM V Direct reverse voltage 600 Reverse voltage V R I 60Hz half sin wave , resistive load Average current 8 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 100 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C j 1.6 2.3 2.8 V Forward voltage V I =8A F F T =125C j - 1.55 - V T =25C j - 0.03 10 mA I V =600V Reverse current R R T =125C j - 5 200 mA I =0.5A, I =1A, Irr=0.25I - 15 25 ns F R R Reverse recovery time trr I =8A, V =400V, dI /dt=-200A/ms - 25 45 ns F R F I =8A, V =400V Reverse recovery current I - 5.5 - A F R Rp T =125C j Reverse recovery charges Qrr dI /dt=-200A/ms - 150 - nC F I =8A, dI /dt=100A/ms, Forward recovery time tfr - 125 - ns F F V V =1.1xV Forward recovery voltage - 4.5 - V Fp FR Fmax R (j-a) Junction to ambient - - 2.5 C/W th Thermal resistance R (j-c) Junction to case - - 1.5 C/W th www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 1/5 2.70.1 16.40.15 9.46 4.050.15 13.51 28.56 9.05 6.00.15 15.050.15 Data Sheet RFV8TG6S lElectrical Characteristic Curves 100 100000 T = 125 C T = 150 C j j 10000 10 T = 150 C j 1000 T = 75 C j T = 125 C 1 j 100 T = 75 C j T = 25 C j 0.1 10 T = 25 C j 0.01 1 0 1000 2000 3000 4000 5000 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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