/ Technical Information IGBT- DD1200S17H4 B2 IGBT-Module IHM-B IHM-B module V = 1700V CES I = 1200A / I = 2400A C nom CRM Typical Applications 3 3-level-applications Active frontend (energy recovery) High power converters Multi level inverter Traction drives Wind turbines Electrical Features T vj op Extended operating temperature Tvj op High current density T = 150C T = 150C vj op vj op Mechanical Features 4 kV AC 1 4 kV AC 1min insulation AlSiC AlSiC base plate for increased thermal cycling capability CTI(>400 Package with CTI > 400 / High creepage and clearance distances / High power and thermal cycling capability High power density IHM B IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 UL approved (E83335) 1 / Technical Information IGBT- DD1200S17H4 B2 IGBT-Module Diode / Diode, Inverter / Maximum Rated Values Tvj = -40C 1570 Repetitive peak reverse voltage T = 25C V 1700 V vj RRM Tvj = 150C 1700 DC I 1200 A F Continuous DC forward current t = 1 ms I 2400 A P FRM Repetitive peak forward current VR = 0 V, tP = 10 ms, Tvj = 125C 140 kAs It It - value V = 0 V, t = 10 ms, T = 150C 130 kAs R P vj T = 125C P 1200 kW vj RQM Maximum power dissipation ton min 10,0 s Minimum turn-on time / Characteristic Values min. typ. max. I = 1200 A, V = 0 V T = 25C 1,80 2,10 V F GE vj Forward voltage I = 1200 A, V = 0 V T = 125C V 1,90 2,10 V F GE vj F I = 1200 A, V = 0 V T = 150C 1,95 V F GE vj I = 1200 A, - di /dt = 7900 A/s (T =150C) T = 25C 1250 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 1350 A R vj RM V = -15 V T = 150C 1400 A GE vj I = 1200 A, - di /dt = 7900 A/s (T =150C) T = 25C 280 C F F vj vj Recovered charge V = 900 V T = 125C Q 460 C R vj r V = -15 V T = 150C 510 C GE vj I = 1200 A, - di /dt = 7900 A/s (T =150C) T = 25C 180 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 310 mJ R vj rec V = -15 V T = 150C 350 mJ GE vj /Diode / per diode R 31,9 K/kW thJC Thermal resistance, junction to case /Diode / per diode RthCH 32,5 K/kW Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 2