X-On Electronics has gained recognition as a prominent supplier of RFV8TJ6SGC9 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFV8TJ6SGC9 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFV8TJ6SGC9 ROHM

RFV8TJ6SGC9 electronic component of ROHM
RFV8TJ6SGC9 ROHM
RFV8TJ6SGC9 Diodes - General Purpose, Power, Switching
RFV8TJ6SGC9  Semiconductors

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See Product Specifications
Part No. RFV8TJ6SGC9
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V Vrm 8A Io Recovery Diode
Datasheet: RFV8TJ6SGC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6201 ea
Line Total: USD 1.62 
Availability - 546
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
546
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 1.6201
10 : USD 1.1955
100 : USD 0.8767
500 : USD 0.7639
1000 : USD 0.698
2000 : USD 0.6884
5000 : USD 0.682

96
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 99
Multiples : 1
99 : USD 1.491

126
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 130
Multiples : 1
130 : USD 1.1534

97
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 56
Multiples : 1
56 : USD 1.2951
100 : USD 1.0826

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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We are delighted to provide the RFV8TJ6SGC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFV8TJ6SGC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFV8TJ6S Datasheet Series Dimensions (Unit : mm) Structure 3.10.1 4.50.1 Standard Fast Recovery 10.20.2 2.60.1 Application General rectification Anode For PFC Cathode RFV8 (CCM : Continuous Current Mode) TJ6S 1 2 Features 2.60.1 Hyper fast recovery / Hard recovery type 1) 1.40.2 2) Ultra low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.830.1 Construction 5.080.1 Silicon epitaxial planar type ROHM : TO-220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Direct reverse voltage 600 Reverse voltage V R I 60Hz half sin wave , resistive load T =80C Average current c 8 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 100 A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit T =25C j 1.6 2.3 2.8 V Forward voltage V I =8A F F T =125C j -1.55 - V T =25C j -0.03 10 A I V =600V Reverse current R R T =125C - 5 200 A j I =0.5A, I =1A, Irr=0.25I -15 25 ns F R R Reverse recovery time trr I =8A, V =400V, dI /dt=200A/s -25 45 ns F R F I =8A, V =400V Reverse recovery current I -5.5 - A F R Rp T =125C j dI /dt= 200A/ s Reverse recovery charges Qrr - 150 - nC F I =8A, dI /dt=100A/ s, Forward recovery time tfr - 125 - ns F F V V =1.1xV Forward recovery voltage -4.5 - V Fp FR Fmax R (j-a) Junction to ambient -- 8.0C/W th Thermal resistance R (j-c) Junction to case -- 3.2C/W th www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.B 1/5 3 16.00.1 9.560.2 3.950.1 13.510.3 28.560.2 9.050.1 6 15.050.1Data Sheet RFV8TJ6S Electrical Characteristic Curves 100 100000 T = 125 C T = 150 C j j 10000 10 T = 150 C j 1000 T = 75 C j T = 125 C 1 j 100 T = 75 C j T = 25 C j 0.1 T = 25 C j 10 0.01 1 0 100 200 300 400 500 600 0 1000 2000 3000 4000 5000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C f = 1MHz j T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.B 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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