RFU10TF6S ROHM

Data Sheet Super Fast Recovery Diode RFU10TF6S Series Dimentions(Unit : mm) Structure Ultra Fast Recovery Applications General rectification (1) (3) Features 1)Single type.(TO-220) 2)Ultra High switching speed Construction (1) (3) Silicon epitaxial plnner Absolute maximum ratings(Tc=25 C) Parameter Conditions Limits Unit Symbol Repetitive peak reverse voltage V Duty0.5 600 V RM Reverse voltage V Direct voltage 600 V R 60Hz half sin wave, Resistance load, Average rectified forward current Io 10 A Tc=50 C 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25 C Junction temperature Tj 150 C Storage temperature 55 to 150 C Tstg Electrical characteristics(Tj=25 C) Parameter Conditions Typ. Max. Symbol Min. Unit I =10A V 2.3 2.8 Forward voltage F -V F I V =600V Reverse current - 0.03 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 16 25 ns F R R - 3.5 Thermal Resistance Rth(j-c) junction to case - C / W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3 Not Recommended for New DesignsData Sheet RFU10TF6S Electrical characteristics curves 100 100000 1000 Tj=150C Tj=125C f=1MHz Tj=125 C 10000 Tj=25 C Tj=150C 10 1000 Tj=75C Tj=25 C 100 Tj=75 C 100 1 Tj=25C 10 1 0.1 10 0 100 200 300 400 500 600 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) R F R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS R F F R R 250 100 2500 Ta=25 C T =25 C T =25 C f=1MHz V =600V R 240 I =10A F V =0V R 2400 n=20pcs n=20pcs n=10pcs 230 AVE : 47.3nA 2300 10 220 2200 AVE : 221.3pF AVE : 2249mV 210 2100 200 1 2000 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 30 1000 200 T =25 C I =0.5A 25 F I =1A R 150 Irr=0.25I R 20 100 n=10pcs AVE : 150.0A 15 100 AVE : 16.2ns 10 10 I FSM I 1cyc FSM 50 5 8.3ms 8.3ms 8.3ms 1cyc. 1 0 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES I DISRESION MAP FSM I -CYCLE CHARACTERISTICS FSM 5 10 1000 4.5 Rth(j-c) 4 3.5 AVE 4.11kV I FSM time 3 2.5 1 100 2 1.5 1 0.5 AVE 1.14kV 0 10 0.1 C=100pF C=200pF 1 10 100 R=0 R=1.5k 0.0 01 0.01 0.1 1 10 100 1 000 TIME:t(ms) TIME : t(s) I -t CHARACTERISTICS ESD DISPERSION MAP Rth-t CHARACTERISTICS FSM www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A Not Recommended for New Designs ITS ABILITY OF PEAK SURGE PEAK SURGE FORWARD CURRENT: : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : I (A) F F FSM ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN TERMINALS : PEAK SURGE TRANSIENT CAPACITANCE BETWEEN TERMINALS : Ct(pF) THAERMAL IMPEDANCE : Rth (/W) FORWARD CURRENT : I (A) Ct(pF) FSM