X-On Electronics has gained recognition as a prominent supplier of RFUH20NS6SFHTL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFUH20NS6SFHTL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFUH20NS6SFHTL ROHM

RFUH20NS6SFHTL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RFUH20NS6SFHTL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-263S 20A Io
Datasheet: RFUH20NS6SFHTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9703 ea
Line Total: USD 1.97

Availability - 1820
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ: 1  Multiples: 1
Pack Size: 1

 RFUH20NS6SFHTL More Buying Options & Price Grid(s)

Availability Price Quantity
1753
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 1.6542
10 : USD 1.3645
100 : USD 1.0939
500 : USD 0.9539
1000 : USD 0.7691
2000 : USD 0.7632
5000 : USD 0.7632
10000 : USD 0.7342
25000 : USD 0.7149

Specifications

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Repetitive Reverse Voltage Vrrm Max
Forward Current If Av
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
No Of Pins
Svhc
Msl
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFUH20NS6SFHTL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFUH20NS6SFHTL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFUH20NS6S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Super Fast Recovery Applications RFUH20 NS6S General rectification Features LPDS 1)Ultra low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=27C 20 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A 1.8 2.8 Forward voltage F F V V =600V Reverse current I 0.1 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 18 35 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFUH20NS6S 100 100000 Tj=150 C Tj=125 C 10000 10 Tj=75 C Tj=150 C 1000 Tj=125 C Tj=25 C 100 Tj=75 C 1 Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 3000 3500 0 100 200 300 400 500 600 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 2000 1000 V =600V I =20A F R 1950 Tj=25 C Tj=25 C 1900 100 1850 1800 AVE:1915mV AVE:86.5nA 1750 10 1700 1650 1600 1 V DISPERSION MAP I DISPERSION MAP F R 1000 350 f=1MHz f=1MHz 345 V =0V R Tj=25 C 340 335 100 330 AVE:315pF 325 320 10 315 310 305 300 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F REVERSE CURRENT:I (nA) R CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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