RFUH25TB3S ROHM

Data Sheet Super Fast Recovery Diode RFUH25TB3S Serise Dimensions(Unit : mm) Structure Super Fast Recovery Applications General rectification Features 1)Ultra low switching loss FUH25T 2)High current overload capacity B3S Construction Silicon epitaxial planer type 2.54d 0.5 2.54d 0.5 ROHM : TO220FN Manufacture Year Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 350 V RM Reverse voltage V Direct voltage 350 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=74C 20 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 100 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =20A 1.25 1.45 Forward voltage F V F V =350V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 18 30 ns F R R Thermal resistance Rth(j-c) Junction to case 2.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Not Recommended for New Designs Data Sheet RFUH25TB3S 100 100000 Tj=150 C 10000 Tj=125 C Tj=150 C 10 1000 Tj=125 C Tj=75 C Tj=75 C 100 1 Tj=25 C Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 100 1290 I =20A V =350V F R Tj=25 C Tj=25 C 1270 1250 1230 10 AVE:24.5nA 1210 AVE:1218mV 1190 1170 1150 1 I DISPERSION MAP R V DISPERSION MAP F 400 1000 f=1MHz f=1MHz 395 V =0V R Tj=25 C 390 385 380 375 100 AVE:386pF 370 365 360 355 350 10 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)