RFUS20TM4S ROHM

Data Sheet Super Fast Recovery Diode RFUS20TM4S Series Dimensions (Unit : mm) Structure +0.3 +0.3 0.1 0.1 Ultra Fast Recovery +0.2 0.1 (1) (2) (3) Applications General rectification Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common single type +0.1 0.05 Construction Silicon epitaxial planer Absolute maximum ratings (Tc=25C) Parameter Conditions Limits Unit Symbol Repetitive peak reverse voltage V Duty0.5 430 V RM Reverse voltage V Direct voltage 430 V R 60Hz half sin wave, Resistance load, Average rectified forward current Io Tc=68C 20 A 60Hz half sin wave, Non-repetitive Forward current surge peak I 100 A FSM one cycle peak value, Tj=25 C Junction temperature Tj 150 C Storage temperature 55 to 150 C Tstg Electrical characteristics (Tj=25 C) Parameter Conditions Min. Typ. Max. Symbol Unit I =20A - 1.4 1.6 Forward voltage V V F F Reverse current I V =430V - 0.05 10 A R R Reverse recovery time trr I =0.5A,I =1A,Irr=0.25I -24 35 ns F R R -- 2 Thermal resistance Rth(j-c) junction to case C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3 Not Recommended for New Designs +0.4 0.2Data Sheet RFUS20TM4S Electrical characteristic curves 100 100000 1000 Tj=150 C Tj=125 C f=1MHz 10000 Tj=25 C Tj=150 C 10 Tj=125C 1000 Tj=25 C 100 Tj=75 C 100 Tj=75 C 1 10 Tj=25 C 1 0.1 10 0 50 100 150 200 250 300 350 400 450 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F REVERSE VOLTAGE : V (V) R R V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F V -I CHARACTERISTICS R R R 400 1500 1000 Ta=25 C T =25 C T =25 C f=1MHz 1450 390 I =20A V =430V V =0V F R R n=20pcs n=20pcs n=10pcs 1400 100 380 1350 370 AVE : 49.0nA AVE : 1373mV 10 1300 AVE : 372.3pF 360 1250 350 1 1200 V DISPERSION MAP I DISPERSION MAP Ct DISPERSION MAP R F 1000 30 300 T =25C I =0.5A 25 F 250 I =1A R Irr=0.25I R 100 20 200 n=10pcs AVE : 22.9ns 15 150 AVE : 183A 10 10 100 I FSM 1cyc I FSM 5 50 8.3ms 8.3ms 8.3ms 1cyc. 0 1 0 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP I DISRESION MAP FSM -CYCLE CHARACTERISTICS I FSM 7 10 1000 6 I FSM AVE : 6.05kV time 5 Rth(j-c) 4 1 100 3 AVE : 0.93kV 2 1 0 0.1 10 C=200pF C=100pF 0.001 0.01 0.1 1 10 100 1000 1 10 100 R=0 R=1.5k TIME : t(ms) TIME : t(s) ESD DISPERSION MAP I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A Not Recommended for New Designs ITS ABILITY OF PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : (A) F F FSM ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN TERMINALS : PEAK SURGE TRANSIENT CAPACITANCE BETWEEN TERMINALS : Ct(pF) THAERMAL IMPEDANCE:Rth ( C/W) FORWARD CURRENT : I (A) Ct(pF) FSM