X-On Electronics has gained recognition as a prominent supplier of RFUS20TM6S Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFUS20TM6S Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFUS20TM6S ROHM

RFUS20TM6S electronic component of ROHM
RFUS20TM6S ROHM
RFUS20TM6S Diodes - General Purpose, Power, Switching
RFUS20TM6S  Semiconductors

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See Product Specifications
Part No. RFUS20TM6S
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching DIODE SWITCH 600V 20A 3PIN
Datasheet: RFUS20TM6S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.5162 ea
Line Total: USD 2.52 
Availability - 937
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
937
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 2.5162
10 : USD 2.0496
100 : USD 1.5433
500 : USD 1.338
1000 : USD 1.1501
2000 : USD 1.1501
5000 : USD 1.1501
10000 : USD 1.1045
25000 : USD 1.0776

365
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 108
Multiples : 1
108 : USD 1.1992
250 : USD 1.1509

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFUS20TM6S from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFUS20TM6S and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Data Sheet Super Fast Recovery Diode RFUS20TM6S Series Dimensions(Unit : mm) Structure +0.3 +0.3 Ultra Fast Recovery -0.1 -0.1 +0.2 -0.1 Applications (1) (2) (3) General rectification Features 1)Cathode Common Single type.(TO-220) 2)Ultra High switching speed (1) (2) (3) +0.1 -0.05 Construction Silicon epitaxial planar Absolute maximum ratings(Tc=25C) Parameter Conditions Limits Symbol Unit Repetitive peak reverse voltage V Duty0.5 600 V RM Reverse voltage Direct voltage 600 V V R Average rectified forward current Io 60Hz half sin wave, Resistance load, 20 A Tc=50C 60Hz half sin wave, Non-repetitive Forward current surge peak I 100 A FSM one cycle peak value, Tj=25C Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical characteristics(Tj=25 C) Parameter Conditions Typ. Symbol Min. Max. Unit I =20A 2.3 Forward voltage V 2.8 V F F Reverse current I V =600V 0.05 10 A R R Reverse recovery time trr I =0.5A,I =1A,Irr=0.25I 23 35 ns F R R Thermal Resistance Rth(j-c) junction to case 1.8 C / W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3 Not Recommended for New Designs +0.4 -0.2Data Sheet RFUS20TM6S Electrical characteristics curves 100 100000 1000 Tj=125 C Tj=150 C f=1MHz Tj=150C 10000 Tj=25 C 10 Tj=125 C Tj=25 C 1000 Tj=75 C 100 100 Tj=75 C 1 10 Tj=25 C 1 0.1 10 0 50 100 150 200 250 300 350 0 1000 2000 3000 4000 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) R REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS F F R 450 1000 2500 445 Ta=25C T=25 C T=25 C 440 f=1MHz 2400 I =20A V =600V F R V =0V R AVE : 2113mV n=20pcs n=20pcs 435 n=10pcs 100 2300 430 AVE : 415.9pF 425 2200 420 10 2100 415 410 AVE : 61.8nA 2000 405 400 1 1900 I DISPERSION MAP Ct DISPERSION MAP R V DISPERSION MAP F 1000 300 40 T=25 C I 1cyc FSM I =0.5A F 250 35 I =1A R Irr=0.25I 8.3ms R 100 200 30 n=10pcs 150 25 10 100 20 I FSM AVE : 156A AVE:26.1ns 50 15 8.3ms 8.3ms 1cyc. 0 10 1 110 100 DISRESION MAP I trr DISPERSION MAP FSM NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 1000 15 10 I FSM Rth(j-c) time 12 9 100 1 AVE : 11.0kV 6 AVE : 1.20kV 3 10 0 0.1 1 10 100 C=200pF C=100pF 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME : t(ms) TIME : t(s) ESD DISPERSION MAP I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A Not Recommended for New Designs ITS ABILITY OF PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : I (A) F F FSM ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN TRANSIENT PEAK SURGE CAPACITANCE BETWEEN TERMINALS : Ct(pF) THAERMAL IMPEDANCE : Rth ( C/W) FORWARD CURRENT : I (A) TERMINALS : Ct(pF) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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