RGF1J-E3/67A Vishay

333 3 RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M www.vishay.com Vishay General Semiconductor Surface-Mount Glass Passivated Junction Fast Switching Rectifier FEATURES Superectifier structure for high reliability condition Superectier Ideal for automated placement Fast switching for high efficiency Low leakage current High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C GF1 (DO-214BA) AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in fast switching rectification of power supply, 3D Models inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS MECHANICAL DATA I 1.0 A F(AV) Case: GF1 (DO-214BA), molded epoxy over glass body 50 V, 100 V, 200 V, 400 V, 600 V, Molding compound meets UL 94 V-0 flammability rating V RRM 800 V, 1000 V Base P/N-E3 - RoHS-compliant, commercial grad e I 30 A FSM Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified V 1.3 V F (X denotes revision code e.g. A, B, ...) t 150 ns, 250 ns, 500 ns rr Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 E3 and HE3 suffix meet JESD 201 class 2 whisker test Package GF1 (DO-214BA) st Circuit configuration Single Polarity: two bands indicate cathode end - 1 band nd denotes device type and 2 band denotes repetitive peak reverse voltage rating MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT Device marking code RA RB RD RG RJ RK RM Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current I 1.0 A F(AV) at T = 120 C L Peak forward surge current 8.3 ms single half I 30 A FSM sine-wave superimposed on rated load Maximum full load reverse current, full cycle I 50 A R(AV) average T = 55 C A Operating junction and storage temperature range T , T -65 to +175 C J STG Revision: 12-Nov-2020 Document Number: 88697 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT Maximum instantaneous 1.0 A V 1.3 V F forward voltage Maximum DC reverse T = 25 C 5.0 A current at rated DC I A R T = 125 C 100 blocking voltage A Typical reverse I = 0.5 A, I = 1.0 A, F R t 150 250 500 ns rr recovery time I = 0.25 A rr Typical junction 4.0 V, 1 MHz C 8.5 pF J capacitance THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT (1) R 80 JA Typical thermal resistance C/W (1) R 28 JL Note (1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE RGF1J-E3/67A 0.104 67A 1500 7 diameter plastic tape and reel RGF1J-E3/5CA 0.104 5CA 6500 13 diameter plastic tape and reel (1)(2) RGF1JHE3 A/H 0.104 H 1500 7 diameter plastic tape and reel (1)(2) RGF1JHE3 A/I 0.104 I 6500 13 diameter plastic tape and reel (1)(3) RGF1KHE3 B/H 0.104 H 1500 7 diameter plastic tape and reel (1)(3) RGF1KHE3 B/I 0.104 I 6500 13 diameter plastic tape and reel Notes (1) AEC-Q101 qualified (2) A is applied for A to J class (3) B is applied for K and M class RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 1.25 30 T = T Max. J J 8.3 ms Single Half Sine-Wave P.C.B. Mounted on 25 1.00 0.2 x 0.2 (5.0 mm x 5.0 mm) Copper Pad Areas 20 0.75 15 0.50 10 60 Hz 0.25 5 Resistive or Inductive Load 0 0 100 120 140 160 180 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 12-Nov-2020 Document Number: 88697 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Peak Forward Surge Current (A) Average Forward Rectified Current (A)