X-On Electronics has gained recognition as a prominent supplier of RGF1M-E3\67A Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RGF1M-E3\67A Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RGF1M-E3\67A Vishay

RGF1M-E3\67A electronic component of Vishay
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Part No.RGF1M-E3\67A
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 1 Amp 1000Volt 500ns 30 Amp IFSM
Datasheet: RGF1M-E3\67A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
374: USD 0.2951 ea
Line Total: USD 110.37 
Availability - 0
MOQ: 374  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 374
Multiples : 1
374 : USD 0.2951
500 : USD 0.2891

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
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Factory Pack Quantity :
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We are delighted to provide the RGF1M-E3\67A from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGF1M-E3\67A and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES Superectifier structure for high reliability condition Ideal for automated placement Fast switching for high efficiency Superectier Low leakage current High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C AEC-Q101 qualified available GF1 (DO-214BA) - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, PRIMARY CHARACTERISTICS inverters, converters, and freewheeling diodes for I 1.0 A consumer, automotive, and telecommunication. F(AV) 50 V, 100 V, 200 V, 400 V, 600 V, V RRM 800 V, 1000 V MECHANICAL DATA I 30 A FSM Case: GF1 (DO-214BA), molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating V 1.3 V F Base P/N-E3 - RoHS-compliant, commercial grade t 150 ns, 250 ns, 500 ns rr Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified T max. 175 C J (X denotes revision code e.g. A, B, ...) Package GF1 (DO-214BA) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Diode variations Single E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test st Polarity: two bands indicate cathode end - 1 band nd denotes device type and 2 band denotes repetitive peak reverse voltage rating MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT Device marking code RA RB RD RG RJ RK RM Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current I 1.0 A F(AV) at T = 120 C L Peak forward surge current 8.3 ms single half I 30 A FSM sine-wave superimposed on rated load Maximum full load reverse current, full cycle I 50 A R(AV) average T = 55 C A Operating junction and storage temperature range T , T -65 to +175 C J STG Revision: 25-Aug-17 Document Number: 88697 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT Maximum instantaneous 1.0 A V 1.3 V F forward voltage Maximum DC reverse T = 25 C 5.0 A current at rated DC I A R T = 125 C 100 blocking voltage A Typical reverse I = 0.5 A, I = 1.0 A, F R t 150 250 500 ns rr recovery time I = 0.25 A rr Typical junction 8.5 pF 4.0 V, 1 MHz C J capacitance THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT (1) R 80 JA Typical thermal resistance C/W (1) R 28 JL Note (1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE RGF1J-E3/67A 0.104 67A 1500 7 diameter plastic tape and reel RGF1J-E3/5CA 0.104 5CA 6500 13 diameter plastic tape and reel (1)(2) RGF1KHE3 A/I 0.104 I 6500 13 diameter plastic tape and reel Notes (1) AEC-Q101 qualified (2) A is only applied for K and M class RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 1.25 30 T = T Max. J J 8.3 ms Single Half Sine-Wave P.C.B. Mounted on 25 0.2 x 0.2 (5.0 mm x 5.0 mm) 1.00 Copper Pad Areas 20 0.75 15 0.50 10 60 Hz 0.25 5 Resistive or Inductive Load 0 0 100 120 140 160 180 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 25-Aug-17 Document Number: 88697 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Peak Forward Surge Current (A) Average Forward Rectified Current (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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