RFUS20TF6S ROHM

Data Sheet Super Fast Recovery Diode RFUS20TF6S Series Dimensions (Unit : mm) Structure Ultra Fast Recovery (1) (3) Applications General rectification Features 1)Cathode Common Single type.(TO-220) 2)Ultra High switching speed Construction Silicon epitaxial planer Absolute maximum ratings (Tc=25C) Parameter Conditions Limits Unit Symbol Repetitive peak reverse voltage V Duty0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified forward current Io 60Hz half sin wave, Resistance load, Tc=30C 20 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25 C Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Electrical characteristics (Tj=25 C) Parameter Conditions Min. Typ. Max. Symbol Unit I =20A - 2.2 2.8 Forward voltage V V F F Reverse current I V =600V - 0.1 10 A R R Reverse recovery time trr I =0.5A,I =1A,Irr=0.25I -23 35 ns F R R -- 2 Thermal resistance Rth(j-c) junction to case C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3 Not Recommended for New DesignsData Sheet RFUS20TF6S Electrical characteristic curves 100 100000 1000 Tj=150C Tj=125 C f=1MHz Tj=150 C 10000 Tj=25 C Tj=125 C 10 Tj=25 C 1000 Tj=75 C 100 Tj=75 C 100 1 10 Tj=25 C 1 0.1 10 0 50 100 150 200 250 300 350 0 1000 2000 3000 4000 0 5 10 15 20 25 30 FORWARD VOLTAGE V (mV) REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) F R R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 450 1000 2500 Ta=25 C 445 T =25 C T =25 C f=1MHz 2400 I =20A V =600V 440 F R V =0V R n=20pcs n=20pcs n=10pcs AVE : 2113mV 435 100 2300 430 425 2200 420 AVE : 415.9pF 10 415 2100 410 AVE : 61.8nA 2000 405 400 1 1900 V DISPERSION MAP F I DISPERSION MAP R Ct DISPERSION MAP 1000 40 300 T =25 C 1cyc I FSM 35 250 I =0.5A F I =1A R 8.3ms Irr=0.25I 30 R 100 200 n=10pcs 25 150 20 10 100 I FSM AVE : 26.1ns AVE : 156A 15 50 8.3ms 8.3ms 1cyc. 10 1 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES I DISRESION MAP FSM I -CYCLE CHARACTERISTICS FSM 15 10 1000 Rth(j-c) 12 I FSM time 9 AVE : 11.0kV 1 100 6 AVE : 1.20kV 3 0 10 0.1 C=200pF C=100pF 0.001 0.01 0.1 1 10 100 1000 1 10 100 R=0 R=1.5k TIME : t(ms) TIME : t(s) I -t CHARACTERISTICS ESD DISPERSION MAP Rth-t CHARACTERISTICS FSM www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A Not Recommended for New Designs ITS ABILITY OF PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : I (A) F F FSM ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN TERMINALS : PEAK SURGE TRANSIENT CAPACITANCE BETWEEN TERMINALS : Ct(pF) THAERMAL IMPEDANCE : Rth ( C/W) FORWARD CURRENT : I (A) Ct(pF) FSM