X-On Electronics has gained recognition as a prominent supplier of RFUS20NS4STL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFUS20NS4STL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFUS20NS4STL ROHM

RFUS20NS4STL electronic component of ROHM
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Part No.RFUS20NS4STL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: ROHM Semiconductor Diodes - General Purpose, Power, Switching DIODE FAST REC 430V 20.0A D2PAK
Datasheet: RFUS20NS4STL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.279 ea
Line Total: USD 1279 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.279
2000 : USD 1.279
5000 : USD 1.2709
10000 : USD 1.2293

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
Taric
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We are delighted to provide the RFUS20NS4STL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFUS20NS4STL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Data Sheet Super Fast Recovery Diode RFUS20NS4S lSeries lDimensions (Unit : mm) lLand size figure (Unit : mm) Ultra Fast Recovery RFUS20 NS4S lApplications General rectification lFeatures 1)Ultra low switching loss 2)High current overload capacity lStructure 3)Cathode common single type ROHM : LPDS JEITA : TO263S Manufacture Year, Week and Day lConstruction lTaping dimensions (Unit : mm) Silicon epitaxial planer lAbsolute maximum ratings (Tc=25 C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 430 V RM Reverse voltage V Direct voltage 430 V R 60Hz half sin wave resistive load , Average rectified forward current Io Tc=47C 20 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C lElectrical characteristics (Tj=25 C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A Forward voltage F 1.4 1.6 V F V =430V Reverse current I 0.06 10 A R R Reverse recovery time (*) I =0.5A,I =1A,Irr=0.25I trr 24 35 ns F R R Thermal resistance (*) Rth(j-c) junction to case 2.5 C/W (*) Design assurance without measurement. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 Not Recommended for New DesignsData Sheet RFUS20NS4S 100 1000000 Tj=125 C Tj=125 C 100000 Tj=150 C Tj=150 C 10 10000 1000 Tj=75 C Tj=25 C 1 100 Tj=75 C Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE V (V) FORWARD VOLTAGEV (mV) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1500 f=1MHz Tj=25 C Tj=25 C 1450 I =20A F n=20pcs 1400 100 1350 AVE:1373mV 1300 1250 10 1200 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 100 400 Ta=25 C Tj=25 C f=1MHz V =0V V =430V R 390 R n=10pcs n=20pcs AVE:49.0nA 380 10 370 AVE:372.3pF 360 1 350 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) R F TERMINALS:Ct(pF) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD VOLTAGE:V (mV) R F TERMINALS:Ct(pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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