RFUS20NS6STL ROHM

Data Sheet Super Fast Recovery Diode RFUS20NS6S Series Dimensions(Unit : mm) Land size figure(Unit : mm) Ultra Fast Recovery Applications General rectification Features 1)Ultra low switching loss Structure 2)High current overload capacity 3)Cathode common single type Construction Silicon epitaxial planer Taping dimensions(Unit : mm) Absolute maximum ratings(Tc=25C) Parameter Conditions Limits Unit Symbol Repetitive peak reverse voltage V 600 V Duty0.5 RM Reverse voltage Direct voltage 600 V V R 60Hz half sin wave resistive load , Average rectified forward current Io Tc=36C 20 A 1/2 Io per diode 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25C Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical characteristics(Tj=25 C) Parameter Conditions Min. Typ. Max. Symbol Unit Forward voltage V I =20A - 2.4 2.8 V F F Reverse current I V =600V - 0.05 10 A R R Reverse recovery time I =0.5A,I =1A,Irr=0.25I -23 35 trr ns F R R Thermal resistance Rth(j-c) junction to case -- 2 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3Data Sheet RFUS20NS6S Electrical characteristic curves 100 1000000 1000 Tj=125 C Tj=150 C f=1MHz Tj=150 C 100000 Tj=125 C Tj=25 C 10 10000 Tj=25 C Tj=75C Tj=75 C 1000 100 1 100 Tj=25C 10 1 0.1 10 0 50 100 150 200 250 300 350 0 1000 2000 3000 4000 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) R F R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS R F F R R 600 2500 100 Ta=25 C T =25 C T =25 C f=1MHz I =10A V =600V F R V =0V 2400 AVE : 71.5nA R 550 n=20pcs n=20pcs n=10pcs 2300 500 10 2200 AVE : 492pF AVE : 2264mV 450 2100 400 1 2000 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 1000 300 30 T=25C 1cyc I FSM 25 I =0.5A 250 F I =1A R Irr=0.25I 8.3ms AVE : 26.1ns R 100 20 200 n=10pcs 15 150 10 10 100 AVE : 144.5A I FSM 5 50 8.3ms 8.3ms 1cyc. 0 1 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES I DISRESION MAP FSM I -CYCLE CHARACTERISTICS FSM 5 10 1000 4.5 4 3.5 Rth(j-c) I FSM time 3 AVE : 3.76kV 2.5 1 100 2 1.5 1 AVE : 0.94kV 0.5 0 10 0.1 C=200pF C=100pF 1 10 100 R=0 R=1.5k 0 .001 0.01 0.1 1 10 10 0 1 000 TIME : t(ms) TIME : t(s) I -t CHARACTERISTICS ESD DISPERSION MAP Rth-t CHARACTERISTICS FSM www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A ITS ABILITY OF PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : I (A) F F FSM ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN TERMINALS : PEAK SURGE TRANSIENT CAPACITANCE BETWEEN TERMINALS : Ct(pF) THAERMAL IMPEDANCE:Rth ( C/W) FORWARD CURRENT : I (A) Ct(pF) FSM