RFUH20TB4S ROHM

Data Sheet Super Fast Recovery Diode RFUH20TB4S    Serise Dimensions(Unit : mm) Structure Super Fast Recovery Applications General rectification Features 1)Ultra low switching loss FUH20T 2)High current overload capacity B4S  Construction Silicon epitaxial planer type 2.54 d 0.5 2.54 d 0.5 ROHM : TO220FN Manufacture Year Week  Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 430 V RM Reverse voltage V Direct voltage 430 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=45C 20 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 100 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =20A 1.45 1.7 Forward voltage F V F V =430V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 18 25 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C/W ROHMCOM WWW !LLR IGHTSRESER ED V ,TD /(-#O 2 1/4 2012.06 - Rev.A Data Sheet RFUH20TB4S 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=150 C 1000 Tj=75 C Tj=125 C 100 1 Tj=75 C Tj=25 C 10 Tj=25 C 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1550 1000 1540 I =20A V =430V F R 1530 Tj=25 C Tj=25 C 1520 1510 1500 100 1490 AVE:21.6nA 1480 1470 1460 1450 10 1440 1430 AVE:1455mV 1420 1410 1400 1 I DISPERSION MAP R V DISPERSION MAP F 1000 300 f=1MHz f=1MHz V =0V R 290 Tj=25 C 100 280 270 10 260 AVE:265pF 250 1 240 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R