RFUH20TF6S ROHM

Data Sheet Super Fast Recovery Diode RFUH20TF6S Serise Dimensions(Unit : mm) Structure Super Fast Recovery Applications General rectification RFUH20 TF6S Features 1)Ultra low switching loss 2)High current overload capacity Construction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=27C 20 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 100 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =20A 1.8 2.8 Forward voltage F V F V =600V Reverse current I 0.1 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 18 35 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFUH20TF6S 100 100000 Tj=150 C Tj=125 C 10000 Tj=150 C 10 Tj=75 C Tj=125 C 1000 Tj=75 C Tj=25 C 100 1 Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 3000 3500 0 100 200 300 400 500 600 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 2000 1000 V =600V I =20A R F 1950 Tj=25 C Tj=25 C 1900 1850 AVE:1915mV 100 1800 1750 1700 AVE:86.5nA 1650 1600 10 I DISPERSION MAP V DISPERSION MAP R F 1000 350 f=1MHz f=1MHz 345 V =0V R 340 Tj=25 C 335 100 330 AVE:315pF 325 320 10 315 310 305 1 300 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)