X-On Electronics has gained recognition as a prominent supplier of RFUH10NS6STL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFUH10NS6STL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFUH10NS6STL ROHM

RFUH10NS6STL electronic component of ROHM
RFUH10NS6STL ROHM
RFUH10NS6STL Diodes - General Purpose, Power, Switching
RFUH10NS6STL  Semiconductors

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See Product Specifications
Part No. RFUH10NS6STL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: ROHM Semiconductor Diodes - General Purpose, Power, Switching Diode Switching 600V 10A
Datasheet: RFUH10NS6STL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1675 ea
Line Total: USD 1.17 
Availability - 1652
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1652
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 1.1675
10 : USD 0.942
100 : USD 0.6699
500 : USD 0.6325
10000 : USD 0.6314
25000 : USD 0.6303

97
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 88
Multiples : 1
88 : USD 0.8658
100 : USD 0.6812

1208
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 129
Multiples : 1
129 : USD 0.8237
250 : USD 0.7907
500 : USD 0.7621
1000 : USD 0.7089

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFUH10NS6STL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFUH10NS6STL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Data Sheet Super Fast Recovery Diode RFUH10NS6S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Super Fast Recovery Applications RFUH10 General rectification NS6S Features LPDS 1)Ultra low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=64C 10 Io A (*1) Forward current surge peak I 60 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =10A 1.8 2.8 Forward voltage F F V V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 15 25 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFUH10NS6S 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=75 C 1000 Tj=150 C Tj=125 C 100 Tj=25 C 1 Tj=75 C Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 2000 1000 I =10A F V =600V R 1950 Tj=25 C Tj=25 C 1900 100 1850 1800 1750 10 AVE:1806mV AVE:32.3nA 1700 1650 1600 1 I DISPERSION MAP R V DISPERSION MAP F 180 1000 f=1MHz f=1MHz 175 V =0V R 170 Tj=25 C 165 100 160 155 150 AVE:157pF 10 145 140 135 130 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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