X-On Electronics has gained recognition as a prominent supplier of RFUH10TB4S Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. RFUH10TB4S Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

RFUH10TB4S ROHM

Name: RFUH10TB4S
Brand: ROHM
SKU: RFUH10TB4S_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	RFUH10TB4S
Manufacturer:	ROHM
Category:	Schottky Diodes & Rectifiers
Description:	Diode Switching 430V 10A 2-Pin(2+Tab) TO-220FN Bulk
Datasheet:	RFUH10TB4S Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

29: USD 1.1772 ea
Line Total: USD 34.14

Availability - 0

MOQ: 29 Multiples: 1
Pack Size: 1

RFUH10TB4S More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 08 Jul to Fri. 12 Jul MOQ : 29 Multiples : 1	29 : USD 1.1772 50 : USD 0.8543 100 : USD 0.7563

Specifications

Manufacturer ROHM ROHM
Product Category Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers
RoHS - XON 1 1
Mounting Style Through Hole Through Hole
Configuration Single Single
Vf - Forward Voltage 1.7 V 1.7 V
Packaging Bulk Bulk
Brand Rohm Semiconductor Rohm Semiconductor
Operating Temperature Classification military military
Operating Temp Range - 55 C to 150 C - 55 C to 150 C
Rev Recov Time 25 ns 25 ns
Rev Curr 10(Ua) 10(Ua)
Package Type TO - 220FN TO - 220FN
Pin Count 2 + Tab 2 + Tab
Peak Non-Repetitive Surge Current 80 A 80 A
Rad Hardened No No
Rectifier Type Switching Diode Switching Diode

We are delighted to provide the RFUH10TB4S from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFUH10TB4S and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFUH10TB4S Serise Dimensions(Unit : mm) Structure Super Fast Recovery Applications General rectification Features 1)Ultra low switching loss FUH10T 2)High current overload capacity B4S Construction Silicon epitaxial planer type 2.54d 0.5 2.54d 0.5 ROHM : TO220FN Manufacture Year Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 430 V RM Reverse voltage V Direct voltage 430 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=90C 10 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 80 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =10A 1.4 1.7 Forward voltage F V F V =430V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 15 25 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Not Recommended for New Designs Data Sheet RFUH10TB4S 100000 100 Tj=150 C 10000 Tj=125 C 10 1000 Tj=150 C Tj=75 C Tj=125 C 100 1 Tj=75 C Tj=25 C 10 Tj=25 C 0.1 1 0 50 100 150 200 250 300 350 400 450 0 500 1000 1500 2000 2500 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1000 1450 1440 V =430V I =10A R F 1430 Tj=25 C Tj=25 C 1420 1410 100 1400 AVE:17.6nA 1390 1380 1370 1360 10 1350 1340 AVE:1371mV 1330 1320 1310 1300 1 V DISPERSION MAP F I DISPERSION MAP R 200 1000 f=1MHz f=1MHz 190 V =0V R 180 Tj=25 C 170 100 160 150 140 AVE:150pF 10 130 120 110 100 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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