X-On Electronics has gained recognition as a prominent supplier of CUS03(TE85L,Q,M) Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CUS03(TE85L,Q,M) Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CUS03(TE85L,Q,M) Toshiba

CUS03(TE85L,Q,M) electronic component of Toshiba
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Part No.CUS03(TE85L,Q,M)
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Toshiba Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 20A 0.52V VFM
Datasheet: CUS03(TE85L,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.9191
10 : USD 0.7457
100 : USD 0.204
500 : USD 0.1554
1000 : USD 0.1211
4000 : USD 0.1046
8000 : USD 0.0994
24000 : USD 0.0912
48000 : USD 0.0891
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Vr - Reverse Voltage
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CUS03(TE85L,Q,M) from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CUS03(TE85L,Q,M) and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CUS03 TOSHIBA Schottky Barrier Diode CUS03 Unit: mm Switching Mode Power Supply Applications + 0.2 1.25 0.1 Portable Equipment Battery Applications + 0.05 0.13 0.88 0.1 0.03 Repetitive peak reverse voltage : V = 40 V RRM Average forward current : I = 0.7 A F (AV) Peak forward voltage : V = 0.52 V I = 0.7 A FM F Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: USFLAT Absolute Maximum Ratings (Ta = 25C) 0.6 0.1 0.88 0.1 Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 40 V 0.6 0.1 RRM Average forward current I A F (AV) 0.7 (Note 1) Non-repetitive peak forward surge current I 20 (50 Hz) A FSM Junction temperature T 40 to 150 C 0.78 0.1 j ANODE CATHODE Storage temperature range T 40 to 150 C stg 0.6 0.1 Note 1: Ta = 53C: Device mounted on a glass-epoxy board Board size : 50 mm 50 mm, JEDEC Soldering land size : 6 mm 6 mm = 20 V JEITA Rectangular waveform ( = 180), VR Note 2: Using continuously under heavy loads (e.g. the application of TOSHIBA 3-2B1S high temperature/current/voltage and the significant change in Weight: 0.004 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.1 A (pulse test) 0.37 FM (1) FM Peak forward voltage V V I = 0.7 A (pulse test) 0.48 0.52 FM (2) FM I V = 5 V (pulse test) 0.4 RRM (1) RRM Repetitive peak reverse current A I V = 40 V (pulse test) 3.0 100 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 45 pF j R Device mounted on a ceramic board board size 50 mm 50 mm 75 soldering land size 2 mm 2 mm board thickness 0.64 mm Thermal resistance R C/W th (j-a) (junction to ambient) Device mounted on a glass-epoxy board board size 50 mm 50 mm 150 soldering land size 6 mm 6 mm board thickness 1.6 mm Thermal resistance (junction to lead) R Junction to lead of cathode side 30 C/W th (j-) Start of commercial production 2003-11 1 2018-07-02 2.5 0.2 0.6 0.1 1.9 0.1 0 ~ 0.05 0.5 0.1 1.4 0.2CUS03 Marking Abbreviation Code Part No. 3 CUS03 Land pattern dimensions for reference only Unit: mm 2.0 0.5 0.8 1.1 0.8 Handling Precaution 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for designing a circuit using this device. V : Use this rating with reference to (1) above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account when designing a device at low temperature. I : We recommend that the worst-case current be no greater than 80% of the absolute maximum F (AV) rating of I and T be below 120C. When using this device, please take the margin into consideration F (AV) j by using an allowable Ta max-I curve. F (AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal FSM operation, which seldom occurs during the lifespan of the device. T : Derate this rating when using a device to ensure high reliability. j We recommend that the device be used at T below 120C. j 3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) For other design considerations, see the Toshiba website. 2 2018-07-02

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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