CUS04(TE85L,Q,M) Toshiba

CUS04 Schottky Barrier Diode CUS04 Unit: mm Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices Repetitive peak reverse voltage : V = 60 V RRM Average forward current : I = 0.7 A F (AV) Peak forward voltage : V = 0.58 V I = 0.7 A FM F Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: USFLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 60 V RRM Average forward current I A F (AV) 0.7 (Note 1) 1 ANODE Non-repetitive peak forward surge current I 20 (50 Hz) A FSM 2 CATHODE Junction temperature T 40 to 150 C j Storage temperature range T 40 to 150 C stg JEDEC Note 1: Ta = 27C Device mounted on a glass-epoxy board Board size : 50 mm 50 mm JEITA Soldering land size : 6 mm 6 mm TOSHIBA 3-2B1S Board thickness : 1.6 mm Rectangular waveform : = 180, VR = 30 V Weight: 0.004 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.1 A (pulse test) 0.40 FM (1) FM Peak forward voltage V V I = 0.7 A (pulse test) 0.55 0.58 FM (2) FM I V = 5 V (pulse test) 0.3 RRM (1) RRM Repetitive peak reverse current A I V = 60 V (pulse test) 3.0 100 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 38 pF j R Device mounted on a ceramic board board size 50 mm 50 mm 75 soldering land size 2 mm 2 mm board thickness 0.64 mm Thermal resistance R C/W th (j-a) (junction to ambient) Device mounted on a glass-epoxy board board size 50 mm 50 mm 150 soldering land size 6 mm 6 mm board thickness 1.6 mm Thermal resistance (junction to lead) R 30 C/W th (j-) Start of commercial production 2003-11 1 2018-10-01 CUS04 Marking Abbreviation Code Part No. 4 CUS04 Land pattern dimensions for reference only Unit: mm 2.0 0.5 0.8 1.1 0.8 Handling Precaution 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for designing a circuit using this device. V : Use this rating with reference to (1) above. V has a temperature coefficient of 0.1%/C. Take this RRM RRM temperature coefficient into account designing a device at low temperature. I : We recommend that the worst-case current be no greater than 80% of the absolute maximum rating of F (AV) I and T be below 120C. When using this device, take the margin into consideration by using an F (AV) j allowable Ta max-I curve. F (AV) I : This rating specifies the nonr-epetitive peak current. This is only applied for an abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using a device to ensure high reliability. j We recommend that the device be used at T below 120C. j 3) Thermal resistance between junction and ambient lfuctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) For other design considerations, see the Toshiba website. 2 2018-10-01