X-On Electronics has gained recognition as a prominent supplier of CUS08F30,H3F Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CUS08F30,H3F Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CUS08F30,H3F Toshiba

CUS08F30,H3F electronic component of Toshiba
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Part No.CUS08F30,H3F
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Toshiba Schottky Diodes & Rectifiers Single High-speed switching
Datasheet: CUS08F30,H3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0373 ea
Line Total: USD 111.9 
Availability - 5820
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2756
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 5
Multiples : 5
5 : USD 0.0848
50 : USD 0.0688
150 : USD 0.0606
500 : USD 0.0539
3000 : USD 0.0515
6000 : USD 0.0499

5820
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0373

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CUS08F30,H3F from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CUS08F30,H3F and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CUS08F30 Schottky Barrier Diode Silicon Epitaxial CUS08F30CUS08F30CUS08F30CUS08F30 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low forward voltage: V = 0.40 V (typ.) F(3) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode USC 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Note Rating Unit Reverse voltage V 30 V R Average rectified current I (Note 1) 800 mA O Non-repetitive peak forward surge current I (Note 2) 5 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic circuit board of 25 mm 25 mm, Pad dimension of 2 mm 2 mm. Note 2: Measured with a 10 ms pulse. Start of commercial production 2010-12 2014-04-14 1 Rev.5.0CUS08F30 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 0.22 V F(1) F V I = 100 mA 0.28 F(2) F V I = 800 mA 0.40 0.45 F(3) F Reverse current I V = 30 V 50 A R(1) R Total capacitance C V = 0 V, f = 1 MHz 170 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Marking Code Part Number HQ CUS08F30 7. 7. Usage ConsiderationsUsage Considerations 7. 7. Usage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. 8. 8. 8. Land Pattern Dimensions for Reference OnlyLand Pattern Dimensions for Reference OnlyLand Pattern Dimensions for Reference OnlyLand Pattern Dimensions for Reference Only Fig. Fig. Fig. Fig. 8.18.18.18.1 Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm) 2014-04-14 2 Rev.5.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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