CUS10S40
Schottky Barrier Diode Silicon Epitaxial
CUS10S40CUS10S40CUS10S40CUS10S40
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications
High-Speed Switching
2. 2. FeaturesFeatures
2. 2. FeaturesFeatures
(1) Small package
(2) Low forward voltage: V (2) = 0.45 V (typ.)
F
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
1: Cathode
2: Anode
USC
Start of commercial production
2013-09
2014-04-07
1
Rev.2.0CUS10S40
4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 ))
4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 ))
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Characteristics Symbol Note Rating Unit
Peak reverse voltage V 40 V
RM
Average rectified current I (Note 1) 1.0 A
O
Non-repetitive peak forward surge current I (Note 2) 5 A
FSM
Junction temperature T 125
j
Storage temperature T -55 to 125
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 ))))
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Characteristics Symbol Test Condition Min Typ. Max Unit
Forward voltage V (1) I = 0.5 A (Pulse test) 0.35 0.40 V
F F
Forward voltage V (2) I = 1 A (Pulse test) 0.45 0.50 V
F F
Reverse current I V = 40 V (Pulse test) 150 A
R R
Total capacitance C V = 0 V, f = 1 MHz 120 pF
t R
6. 6. MarkingMarking
6. 6. MarkingMarking
Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking
Marking Code Part Number
7C CUS10S40
7. 7. 7. 7. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations
Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
2014-04-07
2
Rev.2.0