CVJ10F30,LF Toshiba

CVJ10F30 Schottky Barrier Diode Silicon Epitaxial CVJ10F30CVJ10F30CVJ10F30CVJ10F30 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low forward voltage: V (3) = 0.47 V (typ.) F 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Anode 1 2: NC 3: Anode 2 4: Cathode 2 5: Cathode 1 UFV Start of commercial production 2011-03 2014-04-07 1 Rev.2.0CVJ10F30 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Peak reverse voltage V 32 V RM Reverse voltage V 30 R Average rectified current I (Note 1) 1 A O Non-repetitive peak forward surge current I (Note 2) 5 FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a Ceramics circuit board of 25 mm 25 mm, Pad dimension of 2 mm 2 mm. This is absolute maximum rating of single diode. In the case of using 2 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one. Note 2: Measured with a 10 ms pulse. This is absolute maximum rating of single diode. 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 10 mA 0.23 V F F Forward voltage V (2) I = 100 mA 0.31 V F F Forward voltage V (3) I = 1 A 0.47 0.57 V F F Reverse current I V = 30 V 50 A R R Total capacitance C V = 0 V, f = 1 MHz 120 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Marking Code Part Number SB1 CVJ10F30 2014-04-07 2 Rev.2.0