333 3 SS29, SS210 www.vishay.com Vishay General Semiconductor High Voltage Surface-Mount Schottky Rectifier FEATURES Available Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop High surge capability Meets MSL level 1, per J-STD-020, LF maximum peak SMB (DO-214AA) of 260 C AEC-Q101 qualified available Cathode Anode - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D Models For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS I 1.5 A F(AV) MECHANICAL DATA V 90 V, 100 V RRM Case: SMB (DO-214AA) I 75 A FSM Molding compound meets UL 94 V-0 flammability rating V 0.71 V F Base P/N-E3 - RoHS-compliant, commercial grad e T max. 150 C Base P/NHE3 X - RoHS-compliant, AEC-Q101 qualified J ( X denotes revision code e.g. A, B,.....) Package SMB (DO-214AA) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS29 SS210 UNIT Device marking code S9 S10 Maximum repetitive peak reverse voltage V 90 100 V RRM Maximum RMS voltage V 63 70 V RMS Maximum DC blocking voltage V 90 100 V DC Maximum average forward rectified current (fig. 1) I 1.5 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 75 A FSM superimposed on rated load Peak repetitive reverse surge current at t = 2 s, 1 kHz I 1.0 A p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 23-Apr-2020 Document Number: 88749 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS29, SS210 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL SS29 SS210 UNIT I = 0.1 A 0.43 F I = 1.0 A T = 25 C 0.75 F A (1) Maximum instantaneous forward voltage I = 3.0 A V 0.95 V F F I = 1.5 A 0.71 F T = 100 C A I = 3.0 A 0.85 F T = 25 C 30 A A (1) Maximum DC reverse current at rated V I R R T = 100 C 5 mA A Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS29 SS210 UNIT R 85 JA (1) Maximum thermal resistance C/W R 25 JL Note (1) PCB mounted with 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS210-E3/52T 0.096 52T 750 7 diameter plastic tape and reel SS210-E3/5BT 0.096 5BT 3200 13 diameter plastic tape and reel (1) SS210HE3 A/H 0.096 H 750 7 diameter plastic tape and reel (1) SS210HE3 A/I 0.096 I 3200 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 23-Apr-2020 Document Number: 88749 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000