DF10G7M1N,LF Toshiba

DF10G7M1N ESD Protection Diodes Silicon Epitaxial Planar DF10G7M1NDF10G7M1NDF10G7M1NDF10G7M1N 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications ESD Protection for: USB 2.0 USB 3.0 HDMI SATA/eSATA DisplayPort Interface Digital Visual Interface (DVI) MDDI PCI Express Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1 : I/O 1 2 : I/O 2 3 : GND 4 : I/O 3 5 : I/O 4 6 : NC 7 : NC 8 : NC 9 : NC 10 : NC DFN10 Start of commercial production 2012-11 2014-04-14 1 Rev.5.0DF10G7M1N 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25)) 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25)) aa aa Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V 8 kV ESD Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2014-04-14 2 Rev.5.0