CUS15S30,H3F Toshiba

CUS15S30 Schottky Barrier Diode Silicon Epitaxial CUS15S30CUS15S30CUS15S30CUS15S30 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low forward voltage: V (1) = 0.33 V (typ.) F 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode USC Start of commercial production 2012-10 2014-04-07 1 Rev.3.0CUS15S30 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25)) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25)) aa aa Characteristics Symbol Note Rating Unit Peak reverse voltage V 30 V RM Reverse voltage V 20 R Average rectified current I (Note 1) 1.5 A O Non-repetitive peak forward surge current I (Note 2) 5 FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note 2: Measured with a 10 ms pulse. 2014-04-07 2 Rev.3.0