VS-90SQ... Series, VS-90SQ...-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 9 A FEATURES 150 C T operation J Low forward voltage drop Cathode Anode High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance DO-204AR Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified for commercial level Package DO-204AR Halogen-free according to IEC 61249-2-21 definition I 9 A F(AV) (-M3 only) V 30 V, 35 V, 40 V, 45 V R V at I 0.42 V F F DESCRIPTION I max. 70 mA at 125 C RM The VS-90SQ... axial leaded Schottky rectifier series has T max. 150 C J been optimized for very low forward voltage drop, with Diode variation Single die moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. E 12 mJ AS Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 9A F(AV) V Range 30 to 45 V RRM I t = 5 s sine 2150 A FSM p V 9 Apk, T = 125 C 0.42 V F J T Range - 55 to 150 C J VOLTAGE RATINGS VS-90SQ030 VS-90SQ035 VS-90SQ040 VS-90SQ045 PARAMETER SYMBOL UNITS VS-90SQ030-M3 VS-90SQ035-M3 VS-90SQ040-M3 VS-90SQ045-M3 Maximum DC reverse voltage V R 30 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 69 C, rectangular waveform 9 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 2150 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 340 RRM See fig. 7 Non-repetitive avalanche energy E T = 25 C, I = 1.8 A, L = 7.4 mH 12 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.8 A AR Frequency limited by, T maximum V = 1.5 x V typical J A R Revision: 19-Sep-11 Document Number: 93417 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-90SQ... Series, VS-90SQ...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 9 A 0.48 T = 25 C J 18 A 0.57 Maximum forward voltage drop (1) V V FM See fig. 1 9 A 0.42 T = 125 C J 18 A 0.52 T = 25 C 1.75 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 70 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C 900 pF T R DC Typical series inductance L Measured lead to lead 5 mm from body 10.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation see fig. 4 R 8.0 thJL junction to lead 1/8 lead length C/W Typical thermal resistance, R 44 thJA junction to air 1.4 g Approximate weight 0.049 oz. 90SQ030 90SQ035 Marking device Case style DO-204AR (JEDEC) 90SQ040 90SQ045 Revision: 19-Sep-11 Document Number: 93417 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000