IDM10G120C5XTMA1 Infineon

Diode Silicon Carbide Schottky Diode IDM10G120C5 th 5 Generation CoolSiC 1200 V SiC Schottky Diode Final Datasheet Rev. 2.1 2021-06-09 Industrial Power Control IDM10G120C5 th 5 Generation CoolSiC 1200 V SiC Schottky Diode TM CoolSiC SiC Schottky Diode Features: Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant 1 2 Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Related Links: www.infineon.com/sic Applications Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions Pin 1 and backside cathode Pin 2 anode Key Performance and Package Parameters Type V I Q T Marking Package DC F C j,max IDM10G120C5 1200V 10A 41nC 175C D1012C5 PG-TO252-2 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.1, 2021-06-09