CUS551V30 Schottky Barrier Diode Silicon Epitaxial CUS551V30CUS551V30CUS551V30CUS551V30 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low forward voltage: V = 0.38 V (typ.) F(3) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode USC 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Note Rating Unit Reverse voltage V 30 V R Average rectified current I (Note 1) 500 mA O Non-repetitive peak forward surge current I (Note 2) 5 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass-epoxy circuit board of 20 mm 20 mm, pad dimensions of 4 mm 4 mm Note 2: Measured with a 10 ms pulse. Start of commercial production 2011-07 2014-04-14 1 Rev.5.0CUS551V30 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 0.23 V F(1) F V I = 100 mA 0.31 0.36 F(2) F V I = 500 mA 0.38 0.47 F(3) F Reverse current I V = 20 V 100 A R(1) R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Marking Code Part Number KP CUS551V30 7. Usage Considerations 7. 7. 7. Usage ConsiderationsUsage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. 8. 8. 8. Land Pattern Dimensions for Reference OnlyLand Pattern Dimensions for Reference OnlyLand Pattern Dimensions for Reference OnlyLand Pattern Dimensions for Reference Only Fig. Fig. 8.18.1 Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm) Fig. Fig. 8.18.1 Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm) 2014-04-14 2 Rev.5.0