TM SURMOUNT Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair MA4E2508 Series Rev. V6 Features Case Style 1112 Extremely Low Parasitic Capacitance & Inductance AA Surface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMIC Construction with Polyimide Scratch Protection B Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300C, 16 hours) Applications Aerospace & Defense C ISM Description D E D TM The MA4E2508 SURMOUNT Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Bond Pad Metal Thickness = 2 micron min. - 3 micron max. Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a Case Style 1112 glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The INCHES MILLIMETERS combination of silicon and glass allows HMIC Dim. devices to have excellent loss and power dissipation Min. Max. Min. Max. characteristics in a low profile, reliable device. A 0.0445 0.0465 1.130 1.180 The Surmount Schottky devices are excellent B 0.0169 0.0189 0.430 0.480 choices for circuits requiring the small parasitics of a beam lead device coupled with the superior C 0.0040 0.0080 0.102 0.203 mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to D Sq. 0.0128 0.0148 0.325 0.375 connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. E 0.0128 0.0148 0.325 0.375 These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky Equivalent Circuit diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300C. The 0502 outline allows for Surface Mount placement and multi- functional polarity orientations. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: htt p s:// ww w.m a com . com / su p por t DC-0007655 TM SURMOUNT Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair MA4E2508 Series Rev. V6 Low Barrier = MA4E2508L, Medium Barrier = MA4E2508M, High Barrier = MA4E2508H 1,2 Electrical Specifications: Freq. DC - 18 GHz, T = +25C A 330 max. 0.24 max. 16 typ. MA4E2508L Low 300 typ. 0.18 typ. 20 max. 470 max. 0.24 max. 12 typ. MA4E2508M Medium 420 typ. 0.18 typ. 18 max. 700 max. 0.24 max. 11 typ. MA4E2508H High 650 typ. 0.18 typ. 15 max. 1. R is the dynamic slope resistance where R = R + R , where R = 26 / I (I is in mA) and R is the ohmic resistance. T T S J J DC DC S 2. Maximum forward voltage difference DVf 1 mA: 10 mV 3 Spice Parameters (Per Diode) I R C 0 I C par V BV IBV S S J K J J Barrier N M FC (nA) ( ) (pF) (mA) (pF) (V) (V) (mA) Low 26 12.8 1.20 1.0 E-2 0.5 14 9.0 E-2 8.0 E-2 0.5 5.0 1.0 E-2 Medium 5.0 E-1 9.6 1.20 1.0 E-2 0.5 10 9.0 E-2 8.0 E-2 0.5 5.0 1.0 E-2 High 5.7 E-2 6.5 1.20 1.0 E-2 0.5 4 9.0 E-2 8.0 E-2 0.5 5.0 1.0 E-2 3. Spice parameters (Per Diode) are based on the MA4E2502 Series datasheet. Absolute Maximum Ratings +25C Parameter Absolute Maximum Handling Procedures Forward Current 20 mA Please observe the following precautions to avoid damage: Reverse Voltage 5 V Static Sensitivity RF CW Incident Power 20 dBm These electronic devices are sensitive to electrostatic RF & DC Dissipated Power 50 mW discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be Junction Temperature +175C used when handling these Class 0 devices. Operating Temperature -40C to +125C Storage Temperature -40C to +150C 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: htt p s:// ww w.m a com . com / su p por t DC-0007655