CVFD20065A V = 650 V RRM Silicon Carbide Schottky Diode I (T =135C) = 26 A C F Z -Rec Rectifier Q = 62 nC c Features Package 650-Volt Schottky Rectifier Reduced V for Improved Efficiency F High Humidity Resistance Zero Forward and Reverse Recovery Voltage Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-220-2 Benefits Replace Bipolar with Unipolar Rectifiers PIN 1 Essentially No Switching Losses CASE Higher Efficiency PIN 2 Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Power Inverters Motor Drives CVFD20065A TO-220-2 CVFD20065 EV Chargers Power Factor Correction Server Power Supplies Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Peak Blocking Voltage 650 V DC 57 T =25C C Fig. 3 I Continuous Forward Current 26 A T =135C C F 20 T =149C C 91 T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 61.5 T =110C, t =10 ms, Half Sine Pulse C P 206 T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Forward Surge Current A Fig. 8 FSM 180 T =110C, t =10 ms, Half Sine Pulse C P 1400 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 1100 T =110C, t =10 m s, Pulse C P 187.5 T =25C C P Power Dissipation W Fig. 4 tot 81 T =110C C 212 T =25C, t =10 ms 2 2 2 C P i dt i t value (Per Leg) A s 162 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 Nm M3 Screw TO-220 Mounting Torque 8.8 lbf-in 6-32 Screw 1 CVFD20065A Rev. C, 08-2016Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.35 1.45 I = 20 A T =25C F J V Forward Voltage V Fig. 1 F 1.65 1.80 I = 20 A T =175C F J 8 80 V = 650 V , T =25C R J A Fig. 2 2 V = 400 V , T =25C R J I Reverse Current R 30 300 V = 650 V , T =175C R J A Fig. 2 5 V = 400 V , T =175C R J V = 400 V R Q Total Capacitive Charge 62 nC di /dt = 500 A/s Fig. 5 C T = 25C J 1100 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 113 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 108 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 9.5 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit R Thermal Resistance from Junction to Case 0.8 C/W JC Typical Performance 60 0.10 0.09 T = -55 C J 50 0.08 T = 25 C J 0.07 T = 75 C 40 J T = 175 C J 0.06 T = 125 C J T = 125 C J 30 0.05 T = 175 C J T = 75 C J 0.04 TT = = 25 25 CC 2020 J 0.03 T = -55 C J 0.02 10 0.01 0 0.00 0 100 200 300 400 500 600 700 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V (V) V (V) Foward Voltage, V (V) Reverse Voltage, V (V) F R R F Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 CVFD20065A Rev. C, 08-2016 FFoowwaarrdd CCIurrurr (A)enentt,, II (A) F F RReeveverrsse e LLeaeakkaagge e CICuu (mA)rrrrenentt,, II (mA) RR R