GTVA107001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on GTVA107001EC SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 Package H-36248-2 GHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages. GTVA107001FC Power Sweep, Pulsed CW Package H-37248-2 V = 50 V, I = 100 mA, 128 s pulse width, DS DQ 10% duty cycle, power optimized Features 80 GaN on SiC HEMT technology ergoqhgorgn 70 Input matched qpjgfq4po5g 60 Typical pulsed CW performance (class AB), 1030 Gain: 960 MHz MHz, 50 V, 128 s pulse width, 10% duty cycle Gain: 1030 MHz 50 Gain: 1090 MHz - Output power P = 890 W 3dB Gain: 1150 MHz - Drain efficiency = 75% Gain: 1215 MHz 40 Eff: 960 MHz - Gain = 18 dB Eff: 1030 MHz Eff: 1090 MHz Capable of withstanding a 10:1 load mismatch (all 30 Eff: 1150 MHz phase angles at 700 W peak power under pulse Eff: 1215 MHz 20 conditions: 50 V, 100 mA I ,128 s pulse width, DQ 10% duty cycle 10 g107001efc-gr3 Human Body Model Class IC (per ANSI/ESDA/ 0 200 400 600 800 1000 JEDEC JS-001) Pout (W) Pb-free and RoHS-compliant RF Characteristics Pulsed RF Performance (tested in Wolfspeed production test fixture) GTVA107001EC: V = 50 V, I = 100 mA, P = 700 W, = 1030 MHz, 128 s pulse width, 10% duty cycle DD DQ OUT Characteristic Symbol Min Typ Max Unit Gain G 17.5 20 22 dB ps Drain Efficiency h 67 70 % D GTVA107001FC: V = 50 V, I = 100 mA, P = 700 W, = 1030 MHz, 128 s pulse width, 10% duty cycle DD DQ OUT Characteristic Symbol Min Typ Max Unit Gain G 17.5 20 22 dB ps Drain Efficiency h 65 70 % D All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 03, 2019-02-15 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Gain (dB), Efficiency (%)2 GTVA107001EC/FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V = 8 V, I = 10 mA V 150 V GS D (BR)DSS Drain-source Leakage Current V = 8 V, V = 10 V I 12 mA GS DS DSS Gate Threshold Voltage V = 10 V, I = 84 mA V 6.2 3.0 2.2 V DS D GS(th) Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage V 0 50 V DD Gate Quiescent Voltage V = 50 V, I = 0.10 A V 3.2 V DS D GS(Q) Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V 125 V DSS Gate-source Voltage V 10 to +2 V GS Gate Current I 100 mA G Drain Current I 10 A D Junction Temperature T 225 C J Storage Temperature Range T 65 to +150 C STG Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V ) specified above. DD Thermal Chracteristics 1 T = 85 C, P = 334 W, 50 V, I = 100 mA, 128 s pulse width, 10% duty cycle CASE diss DQ 2 T = 85 C, P = 254 W, 50 V, I = 100 mA, Mode-S signal CASE diss DQ Parameter Symbol Value Unit 1 Thermal Resistance, Junction to Case R 0.21 C/W qJC 2 Thermal Resistance, Junction to Case R 0.25 C/W qJC Ordering Information Type and Version Order Code Package and Description Shipping GTVA107001EC V1 R0 GTVA107001EC-V1-R0 H-36248-2, bolt-down flange Tape & Reel, 50 pcs GTVA107001EC V1 R2 GTVA107001EC-V1-R2 H-36248-2, bolt-down flange Tape & Reel, 250 pcs GTVA107001FC V1 R0 GTVA107001FC-V1-R0 H-37248-2, earless flange Tape & Reel, 50 pcs GTVA107001FC V1 R2 GTVA107001FC-V1-R0 H-37248-2, earless flange Tape & Reel, 250 pcs Rev. 03, 2019-02-15 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Rev. 03, 2019-02-15 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com