PTMA180402M Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt PTMA180402M LDMOS integrated amplifier intended for base station applications Package PG-DSO-20-63 in the 1800 to 2100 MHz frequency band. This device is offered in a 20-pin, thermally-enhanced, overmolded plastic package for cool and reliable operation. Features Broadband Performance V = 28 V, I = 160 mA, I = 360 mA, DD DQ1 DQ2 Designed for wide RF bandwidth and low memory Fixture tuned for 1930 - 1990 MHz effects On-chip matching, integrated input DC block, 50-ohm input and ~4-ohm output 34 5 Typical single-carrier CDMA performance at 1960 MHz, 28 V 30 0 - Average output power = 5 W Gain - Linear gain = 30 dB 26 -5 - Efficiency = 16% - Adjacent channel power = 52 dBc 22 -10 Typical two-tone CW performance at 1960 MHz, 28 V 18 -15 - Output power (PEP) = 40 W at IMD3 = 30 dBc - Efficiency = 34% 14 -20 Return Loss Capable of handling 10:1 VSWR 28 V, 40 W (CW) output power 10 -25 Integrated ESD protection. Meets HBM Class 1B 1700 1800 1900 2000 2100 2200 (minimum), per JESD22-A114F Frequency (MHz) Thermally-enhanced, RoHS-compliant package RF Characteristics CDMA Measurements (tested in Wolfspeed production test fixture) V = 28 V, I = 160 mA, I = 360 mA, P = 4 W average, = 1960 MHz, CDMA IS-95, 9 channels DD DQ1 DQ2 OUT Characteristic Symbol Min Typ Max Unit Gain G 28 30 dB ps Drain Efficiency h 14 16 % D Adjacent Channel Power Ratio ACPR 52 50 dBc RF Characteristics continued next page All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 10, 2018-05-19 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Gain (dB) Return Loss (dB)PTMA180402M 2 RF Characteristics (cont.) Two-tone Specifications (not subject to production testverified by design/characterization in Wolfspeed test fixture) V = 28 V, I = 160 mA, I = 360 mA, P = 40 W PEP, = 1960 MHz, tone spacing = 1 MHz DD DQ1 DQ2 OUT Characteristic Symbol Min Typ Max Unit Gain G 30 dB ps Power Added Efficiency PAE 34 % Third Order Intermodulation Distortion IMD3 32 dBc DC Characteristics Stage 1 Characteristics Conditions Symbol Min Typ Max Unit Drain Leakage Current V = 28 V, V = 0 V I 1.0 A DS GS DSS V = 63 V, V = 0 V I 10.0 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1.0 A GS DS GSS On-state Resistance Stage 1 V = 10 V, V = 0.1 V R 1.6 GS DS DS(on) Operating Gate Voltage V = 28 V, I = 160 mA, V 2.0 2.5 3.0 V DS DQ1 GS Stage 2 Characteristics Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V = 0 V, I = 10 mA V 65 V GS DS (BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 1.0 A DS GS DSS V = 63 V, V = 0 V I 10.0 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1.0 A GS DS GSS On-state Resistance Stage 2 V = 10 V, V = 0.1 V R 0.21 GS DS DS(on) Operating Gate Voltage V = 28 V, I = 360 mA V 2.0 2.5 3.0 V DS DQ2 GS 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Rev. 10, 2018-05-19