V 1200 V DS I 25C 19 A D C2M0160120D R 160 m DS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Solar Inverters Switch Mode Power Supplies Part Number Package High Voltage DC/DC Converters LED Lighting Power Supplies C2M0160120D TO-247-3 Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V = 0 V, I = 100 A V Drain - Source Voltage 1200 V GS D DSmax V Gate - Source Voltage -10/+25 V Absolute maximum values GSmax Gate - Source Voltage -5/+20 V Recommended operational values V GSop 19 Fig. 19 V = 20 V, T = 25C GS C Continuous Drain Current A I D 12.5 V = 20 V, T = 100C GS C Pulsed Drain Current 40 A Fig. 22 I Pulse width t limited by T D(pulse) jmax P Power Dissipation 125 W T =25C , T = 150 C Fig. 20 P C J D -55 to T , T Operating Junction and Storage Temperature C J stg +150 T Solder Temperature 260 C 1.6mm (0.063) from case for 10s L 1 Nm M Mounting Torque M3 or 6-32 screw d 8.8 lbf-in 1 C2M0160120D Rev. C, 10-2015Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 A 2.0 2.6 4 V V = V , I = 2.5 mA DS GS DS V Gate Threshold Voltage Fig. 11 GS(th) 2.1 V = V , I = 2.5 mA, T = 150C V DS GS DS J IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 160 196 V = 20 V, I = 10 A GS D Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 290 V = 20 V, I = 10A, T = 150C GS D J 4.8 V = 20 V, I = 10 A DS DS g Transconductance S Fig. 7 fs 4.3 V = 20 V, I = 10 A, T = 150C DS DS J C Input Capacitance 525 iss V = 0 V GS Fig. 17, C Output Capacitance 47 oss pF V = 1000 V 18 DS C Reverse Transfer Capacitance 4 rss f = 1 MHz VAC = 25 mV Eoss Coss Stored Energy 25 J Fig. 16 EAS Avalanche Energy, Single Pluse 600 mJ I = 10A, V = 50V Fig. 29 D DD EON Turn-On Switching Energy 79 VDS = 800 V, VGS = -5/20 V, I = 10A, D J Fig. 25 R = 2.5, L= 256 H G(ext) EOFF Turn Off Switching Energy 57 t Turn-On Delay Time 9 d(on) V = 800 V, V = -5/20 V DD GS I = 10 A t Rise Time 11 r D ns R = 2.5 , R = 80 Fig. 27 G(ext) L t Turn-Off Delay Time 16 d(off ) Timing relative to V DS Per IEC60747-8-4 pg 83 t Fall Time 10 f , R G(int) Internal Gate Resistance 6.5 f = 1 MHz VAC = 25 mV Qgs Gate to Source Charge 7 V = 800 V, V = -5/20 V DS GS ID = 10 A Qgd Gate to Drain Charge 14 nC Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 34 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note = 3.3 V = -5 V, I 5 A GS F Fig. 8,9, V Diode Forward Voltage V SD 10 = 3.1 V = -5V, I 5 A, T = 150 C GS F J I Continuous Diode Forward Current 19 A T = 25C Note 1 S C trr Reverse Recovery Time 23 ns V = - 5 V, I = 10 A, V = 800 V GS SD R Qrr Reverse Recovery Charge 105 nC Note 1 dif/dt = 3200 A/s I Peak Reverse Recovery Current 9 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 0.9 1.0 JC K/W Fig. 21 R Thermal Resistance From Junction to Ambient 40 JA 2 C2M0160120D Rev. C, 10-2015