X-On Electronics has gained recognition as a prominent supplier of C2M0280120D SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. C2M0280120D SiC MOSFETs are a product manufactured by Wolfspeed. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

C2M0280120D Wolfspeed

C2M0280120D electronic component of Wolfspeed
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Part No.C2M0280120D
Manufacturer: Wolfspeed
Category: SiC MOSFETs
Description: SiC MOSFETs SIC MOSFET 1200V RDS ON 280 mOhm
Datasheet: C2M0280120D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.645 ea
Line Total: USD 7.64 
Availability - 5804
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
56
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 9.0155
10 : USD 7.9651
25 : USD 6.9823
50 : USD 6.9134
100 : USD 6.8471

14
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 10.0432
10 : USD 9.804
30 : USD 9.6452
90 : USD 9.4865

5804
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 7.645
10 : USD 6.71
30 : USD 6.27
1020 : USD 6.116
2520 : USD 6.039
5010 : USD 6.028

27
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 6.9823
50 : USD 6.9134
100 : USD 6.8471

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the C2M0280120D from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the C2M0280120D and other electronic components in the SiC MOSFETs category and beyond.

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V 1200 V DS I 25C 10 A D C2M0280120D R 280 m DS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications LED Lighting Power Supplies High Voltage DC/DC Converters Part Number Package Industrial Power Supplies HVAC C2M0280120D TO-247-3 Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 1200 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage -10/+25 V Absolute maximum values V GSmax V Gate - Source Voltage -5/+20 V Recommended operational values GSop 10 V = 20 V, T = 25 C GS C I Continuous Drain Current A Fig. 19 D 6 V = 20 V, T = 100 C GS C I Pulsed Drain Current 20 A Fig. 22 Pulse width t limited by T D(pulse) jmax P Power Dissipation 62.5 W T =25 C, T = 150 C Fig. 20 P J C D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6 mm (0.063) from case for 10s T L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in 1 C2M0280120D Rev. B, 10-2015 Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 A 2.0 2.6 4 V V = V , I = 1.25mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 2.1 V V = V I = 1.25mA, T = 150 C DS GS, D J IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 280 370 V = 20 V, I = 6 A GS D R Drain-Source On-State Resistance m Fig. 4,5,6 DS(on) 530 V = 20 V, I = 6 A, T = 150 C GS D J 2.8 V = 20 V, I = 6 A DS DS g Transconductance S Fig. 7 fs 2.4 V = 20 V, I = 6 A, T = 150 C DS DS J C Input Capacitance 259 iss V = 0 V GS C Output Capacitance 23 oss pF Fig. 17,18 V = 1000 V DS C Reverse Transfer Capacitance 3 rss f = 1 MHz VAC = 25 mV E C Stored Energy 12.5 J Fig 16 oss oss E Avalanche Energy, Single Pluse 280 mJ I = 6A, V = 50V Fig. 29 AS D DD E Turn-On Switching Energy 32 ON V = 800 V, V = -5/20 V, DS GS J Fig. 25 I = 6A, R = 2.5, L= 412 H E Turn Off Switching Energy 37 D G(ext) OFF t Turn-On Delay Time 5.2 d(on) V = 800 V, V = -5/20 V DD GS I = 6 A, D t Rise Time 7.6 r ns R = 2.5 , R = 133 Fig. 27 G(ext) L td(off ) Turn-Off Delay Time 10.8 Timing relative to V DS Per IEC60747-8-4 pg 83 tf Fall Time 9.9 , R Internal Gate Resistance 11.4 f = 1 MHz V = 25 mV, ESR of C G(int) AC ISS Q Gate to Source Charge 5.6 gs V = 800 V, V = -5/20 V DS GS I = 6 A Qgd Gate to Drain Charge 7.6 nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Gate Charge Total 20.4 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 3.3 V V = - 5 V, I = 3 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 3.1 V V = - 5 V, I = 3 A, T = 150 C GS SD J IS Continuous Diode Forward Current 10 A TC = 25C Note 1 t Reverse Recovery time 24 ns rr V = - 5 V, I = 6 A, V = 800 V GS SD R Note 1 dif/dt = 1000 A/s Q Reverse Recovery Charge 70 nC rr I Peak Reverse Recovery Current 4 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 1.8 2.0 JC C/W Fig. 21 R Thermal Resistance from Junction to Ambient 40 JC 2 C2M0280120D Rev. B, 10-2015

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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