X-On Electronics has gained recognition as a prominent supplier of C3M0065090J SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. C3M0065090J SiC MOSFETs are a product manufactured by Wolfspeed. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

C3M0065090J Wolfspeed

C3M0065090J electronic component of Wolfspeed
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Part No.C3M0065090J
Manufacturer: Wolfspeed
Category: SiC MOSFETs
Description: SiC MOSFETs G3 SiC MOSFET 900V, 65mOhm
Datasheet: C3M0065090J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.4 ea
Line Total: USD 15.4 
Availability - 14164
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
614
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 18.9267
10 : USD 17.3875
25 : USD 17.2978
50 : USD 15.0631
100 : USD 14.7043
1000 : USD 14.5509

14164
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 15.4
10 : USD 14.96
25 : USD 14.927
50 : USD 12.782
500 : USD 12.474
1000 : USD 12.287

59
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 18.914
3 : USD 17.878

614
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 18.9267
10 : USD 17.3875
25 : USD 17.2978
50 : USD 15.0631
100 : USD 14.7043
1000 : USD 14.5509

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Technology
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Product
Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the C3M0065090J from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the C3M0065090J and other electronic components in the SiC MOSFETs category and beyond.

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V 900 V DS C3M0065090J I 25C 35 A D R 65 m Silicon Carbide Power MOSFET DS(on) TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package TAB New C3M SiC MOSFET technology Drain New low impedance package with driver source pin High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Drain Benefits (TAB) 1 2 3 4 5 6 7 G DS S S S S S Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency Gate (Pin 1) Driver Power Applications Source Source (Pin 2) (Pin 3,4,5,6,7) Renewable energy EV battery chargers High voltage DC/DC converters Part Number Package Switch Mode Power Supplies C3M0065090J TO-263-7 Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 900 V V = 0 V, I = 100 A V GS D DSmax V Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note. 1 GSmax V Gate - Source Voltage (static) -4/+15 V Static Note. 2 GSop 35 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 22 V = 15 V, T = 100C GS C I Pulsed Drain Current 90 A Fig. 22 D(pulse) Pulse width t limited by T jmax P Avalanche energy, Single pulse 110 mJ I = 22A, V = 50V E D DD AS P Power Dissipation 113 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 T Solder Temperature 260 C 1.6mm (0.063) from case for 10s L Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 C3M0065090J Rev. D, 06-2019Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 5 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 5 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 65 78 VGS = 15 V, ID = 20 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 90 V = 15 V, I = 20A, T = 150C GS D J 16 V = 15 V, I = 20 A DS DS g Transconductance S Fig. 7 fs 13 V = 15 V, I = 20 A, T = 150C DS DS J C Input Capacitance 760 iss Fig. 17, V = 0 V, V = 600 V GS DS C Output Capacitance 66 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 5 rss VAC = 25 mV Eoss Coss Stored Energy 16 J Fig. 16 Fig. 26, EON Turn-On Switching Energy (Body Diode FWD) 42 V = 400 V, V = -4 V/15 V, I = 20 A, DS GS D J 30 R = 2.5 , L= 65.7 H, T = 150C J G(ext) Note. 3 EOFF Turn Off Switching Energy (Body Diode FWD) 6 t Turn-On Delay Time 7 d(on) VDD = 400 V, VGS = -4 V/15 V t Rise Time 8 r ID = 20 A, RG(ext) = 2.5 , ns Fig. 27 Timing relative to V DS td(off) Turn-Off Delay Time 13 Inductive load tf Fall Time 4 , R Internal Gate Resistance 3.5 f = 1 MHz V = 25 mV G(int) AC Qgs Gate to Source Charge 9 V = 400 V, V = -4 V/15 V DS GS Qgd Gate to Drain Charge 9 ID = 20 A nC Fig. 12 Per IEC60747-8-4 pg 21 Q Total Gate Charge 30 g (T = 25C unless otherwise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.4 V V = -4 V, I = 10 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 4.0 V V = -4 V, I = 10 A, T = 150 C GS SD J I Continuous Diode Forward Current 22 A V = -4 V Note 1 S GS I Diode pulse Current 90 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recovery time 8 ns rr V = -4 V, I = 20 A, V = 500 V GS SD R Note 1 Q Reverse Recovery Charge 215 nC rr dif/dt = 5400 A/s, T = 150 C J I Peak Reverse Recovery Current 32 A rrm Thermal Characteristics Test Conditions Note Symbol Parameter Max. Unit RJC Thermal Resistance from Junction to Case 1.1 C/W Fig. 21 R Thermal Resistance From Junction to Ambient 40 JA Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M0065090J Rev. D, 06-2019

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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