V 1200 V DS I 25C 30 A D C3M0075120D R 75 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package TM C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Marking Part Number Package C3M0075120D TO-247-3 C3M0075120 Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 A DSmax V Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 GSmax V Gate - Source Voltage (static) -4/+15 V Static Note: 2 GSop 30 Fig. 19 V = 15 V, T = 25C GS C Continuous Drain Current A I D 19.7 V = 15 V, T = 100C GS C Pulsed Drain Current 80 A Fig. 22 I Pulse width t limited by T D(pulse) jmax P Power Dissipation 113.6 W T =25C, T = 150 C Fig. 20 P C J D -55 to T , T Operating Junction and Storage Temperature C J stg +150 T Solder Temperature 260 C 1.6mm (0.063) from case for 10s L 1 Nm M Mounting Torque M3 or 6-32 screw d 8.8 lbf-in Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V C3M0075120D Rev. A, 02-2019 1Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 1200 V V = 0 V, I = 100 A (BR)DSS GS D 1.7 2.5 4.0 V V = V , I = 5 mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 2.0 V VDS = VGS, ID = 5 mA, TJ = 150C IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 1200 V, VGS = 0 V I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 75 90 V = 15 V, I = 20 A GS D Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 105 V = 15 V, I = 20A, T = 150C GS D J 9.0 V = 20 V, I = 20 A DS DS g Transconductance S Fig. 7 fs 8.3 VDS= 20 V, IDS= 20 A, TJ = 150C C Input Capacitance 1350 iss Fig. 17, V = 0 V, V = 1000 V GS DS Coss Output Capacitance 58 pF 18 f = 1 MHz Crss Reverse Transfer Capacitance 3 VAC = 25 mV Eoss Coss Stored Energy 35 J Fig. 16 EON Turn-On Switching Energy (SiC Diode FWD) 564 V = 800 V, V = -4 V/15 V, I = 20A, DS GS Fig. 26, D J 29 R = 0, L= 157 H, T = 150C J G(ext) E Turn Off Switching Energy (SiC Diode FWD) 186 OFF EON Turn-On Switching Energy (Body Diode FWD) 924 V = 800 V, V = -4 V/15 V, I = 20A, DS GS Fig. 26, D J 29 R = 0, L= 157 H, T = 150C J G(ext) EOFF Turn Off Switching Energy (Body Diode FWD) 162 t Turn-On Delay Time 56 d(on) VDD = 800 V, VGS = -4 V/15 V t Rise Time 17 r ID = 20 A, RG(ext) = 0 , Fig. 27, ns 28 Timing relative to V DS td(off) Turn-Off Delay Time 32 Inductive load t Fall Time 13 f , R Internal Gate Resistance 10.5 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 17 gs V = 800 V, V = -4 V/15 V DS GS I = 20 A Q Gate to Drain Charge 20 nC D Fig. 12 gd Per IEC60747-8-4 pg 21 Q Total Gate Charge 54 g (T = 25C unless otherwise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.1 V V = -4 V, I = 10 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 3.75 V V = -4 V, I = 10 A, T = 150 C GS SD J IS Continuous Diode Forward Current 25.3 A V = -4 V, T = 25 C Note 1 GS J I Diode pulse Current 80 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 48 ns rr V = -4 V, I = 20 A, V = 800 V GS SD R Note 1 Q Reverse Recovery Charge 279 nC rr dif/dt = 2800 A/s, T = 150 C J I Peak Reverse Recovery Current 9 A rrm Thermal Characteristics Typ. Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 0.97 1.1 JC C/W Fig. 21 R Thermal Resistance From Junction to Ambient 40 JA C3M0075120D Rev. A, 02-2019 2