V 900 V DS I 25C 11 A D C3M0280090J R 280 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package New C3M SiC MOSFET technology TAB Drain High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Drain Higher system efficiency (TAB) 1 2 3 4 5 6 7 Reduced cooling requirements G KS S S S S S Increased power density Increased system switching frequency Gate Applications (Pin 1) Driver Power Source Source Renewable energy (Pin 2) (Pin 3,4,5,6,7) Lighting High voltage DC/DC converters Telecom Power Supplies Induction Heating Part Number Package C3M0280090J 7L D2PAK Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 900 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage -8/+18 V Absolute maximum values V GSmax Gate - Source Voltage -4/+15 V Recommended operational values Note (1) V GSop 11 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 7 V = 15 V, T = 100C GS C I Pulsed Drain Current 22 A Fig. 22 Pulse width t limited by T D(pulse) jmax P P Power Dissipation 50 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L Note (1): MOSFET can also safely operate at 0/+15 V 1 C3M0280090J Rev. - , 12-2015Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 1.2 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 1.2 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 280 360 VGS = 15 V, ID = 7.5 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 385 VGS = 15 V, ID = 7.5 A, TJ = 150C 3.6 V = 15 V, I = 7.5 A DS DS g Transconductance S Fig. 7 fs 3.1 V = 15 V, I = 7.5 A, T = 150C DS DS J Ciss Input Capacitance 150 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 20 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 2 rss AC V = 25 mV E C Stored Energy 4.5 J Fig. 16 oss oss Fig. 26, E Turn-On Switching Energy 19 ON V = 400 V, V = -4 V/15 V, I = 7.5 A, DS GS D J 29 R = 2.5, L= 220 H, T = 150C J G(ext) E Turn Off Switching Energy 3.7 Note(3) OFF td(on) Turn-On Delay Time 10.5 V = 400 V, V = -4 V/15 V DD GS Fig. 27, tr Rise Time 6.5 I = 7.5 A, R = 2.5 , D G(ext) ns 29 Timing relative to V DS t Turn-Off Delay Time 11 d(off) Note(3) Inductive load t Fall Time 4 f , R Internal Gate Resistance 26 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 2.8 gs VDS = 400 V, VGS = -4 V/15 V Q Gate to Drain Charge 3.4 I = 7.5 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 9.5 (T = 25C unless other wise specified) Reverse Diode Characteristics C Test Conditions Note Symbol Parameter Typ. Max. Unit 4.8 V V = -4 V, I = 4 A GS SD Fig. 8, 9, V Diode Forward Voltage SD 10 4.4 V V = -4 V, I = 4 A, T = 150 C GS SD J I Continuous Diode Forward Current 9 A V = -4 V Note (2) S GS I Diode pulse Current 22 A Note (2) S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 20 ns rr V = -4 V, I = 7.5 A, V = 400 V GS SD R Note (2) Q Reverse Recovery Charge 47 nC rr dif/dt = 600 A/s, T = 150 C J I Peak Reverse Recovery Current 3.4 A rrm Note (2): When using SiC Body Diode the maximum recommended V = -4V GS Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 2.5 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 2 C3M0280090J Rev. - , 12-2015